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A25L16PTM-F 参数 Datasheet PDF下载

A25L16PTM-F图片预览
型号: A25L16PTM-F
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位,低电压,串行闪存的85MHz SPI总线接口 [16 Mbit, Low Voltage, Serial Flash Memory With 85MHz SPI Bus Interface]
分类和应用: 闪存
文件页数/大小: 38 页 / 511 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A25L16P Series  
Bulk Erase (BE)  
The Bulk Erase (BE) instruction sets all bits to 1 (FFh).  
Before it can be accepted, a Write Enable (WREN)  
instruction must previously have been executed. After the  
Write Enable (WREN) instruction has been decoded, the  
device sets the Write Enable Latch (WEL).  
S
instruction is not executed. As soon as Chip Select ( ) is  
driven High, the self-timed Bulk Erase cycle (whose duration  
is tBE) is initiated. While the Bulk Erase cycle is in progress,  
the Status Register may be read to check the value of the  
Write In Progress (WIP) bit. The Write In Progress (WIP) bit  
is 1 during the self-timed Bulk Erase cycle, and is 0 when it is  
completed. At some unspecified time before the cycle is  
completed, the Write Enable Latch (WEL) bit is reset.  
The Bulk Erase (BE) instruction is executed only if all  
Block Protect (BP2, BP1, BP0) bits are 0. The Bulk Erase  
(BE) instruction is ignored if one, or more, sectors are  
protected.  
The Bulk Erase (BE) instruction is entered by driving Chip  
S
Select ( ) Low, followed by the instruction code on Serial  
S
Data Input (DIO). Chip Select ( ) must be driven Low for the  
entire duration of the sequence.  
The instruction sequence is shown in Figure 14. Chip Select  
S
(
) must be driven High after the eighth bit of the instruction  
code has been latched in, otherwise the Bulk Erase  
Figure 14. Bulk Erase (BE) Instruction Sequence  
S
0
1
2
3
4
5
6
7
C
Instruction  
DIO  
or  
Notes: Address bits A23 to A21 are Don’t Care.  
PRELIMINARY (April, 2007, Version 0.6)  
20  
AMIC Technology Corp.  
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