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A25L032M-F 参数 Datasheet PDF下载

A25L032M-F图片预览
型号: A25L032M-F
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆低电压,双I / O串行闪存 [32Mbit Low Voltage, Dual-I/O Serial Flash Memory]
分类和应用: 闪存
文件页数/大小: 50 页 / 854 K
品牌: AMICC [ AMIC TECHNOLOGY ]
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A25L032 Series  
OPERATING FEATURES  
Page Programming  
(the Release from Deep Power-down Mode and Read  
Electronic Signature (RES) instruction) is executed.  
All other instructions are ignored while the device is in the  
Deep Power-down mode. This can be used as an extra  
software protection mechanism, when the device is not in  
active use, to protect the device from inadvertent Write,  
Program or Erase instructions.  
To program one data byte, two instructions are required: Write  
Enable (WREN), which is one byte, and a Page Program (PP)  
sequence, which consists of four bytes plus data. This is  
followed by the internal Program cycle (of duration tPP).  
To spread this overhead, the Page Program (PP) instruction  
allows up to 256 bytes to be programmed at a time (changing  
bits from 1 to 0), provided that they lie in consecutive  
addresses on the same page of memory.  
Status Register  
The Status Register contains a number of status and control  
bits that can be read or set (as appropriate) by specific  
instructions. See Read Status Register (RDSR) for a detailed  
description of the Status Register bits.  
Dual Input Fast Program  
The Dual Input Fast Program (DIFP) instruction makes it  
possible to program up to 256 bytes using two input pins at  
the same time (by changing bits from 1 to 0).  
Protection Modes  
For optimized timings, it is recommended to use the Dual  
Input Fast Program (DIFP) instruction to program all  
consecutive targeted bytes in a single sequence rather to  
using several Dual Input Fast Program (DIFP) sequences  
each containing only a few bytes.  
The environments where non-volatile memory devices are  
used can be very noisy. No SPI device can operate correctly  
in the presence of excessive noise. To help combat this, the  
A25L032 boasts the following data protection mechanisms:  
„ Power-On Reset and an internal timer (tPUW) can provide  
protection against inadvertent changes while the power  
supply is outside the operating specification.  
Sector Erase, Block Erase, and Chip Erase  
„ Program, Erase and Write Status Register instructions are  
checked that they consist of a number of clock pulses that  
is a multiple of eight, before they are accepted for  
execution.  
„ All instructions that modify data must be preceded by a  
Write Enable (WREN) instruction to set the Write Enable  
Latch (WEL) bit. This bit is returned to its reset state by  
the following events:  
The Page Program (PP) instruction and Dual Input Fast  
Program (DIFP) instruction allow bits to be reset from 1 to 0.  
Before this can be applied, the bytes of memory need to have  
been erased to all 1s (FFh). This can be achieved, a sector at  
a time, using the Sector Erase (SE) instruction, a block at a  
time, using the Block Erase (BE) instruction, or throughout the  
entire memory, using the Chip Erase (CE) instruction. This  
starts an internal Erase cycle (of duration tSE, tBE, or tCE).  
The Erase instruction must be preceded by a Write Enable  
(WREN) instruction.  
- Power-up  
- Write Disable (WRDI) instruction completion  
- Write Status Register (WRSR) instruction completion  
- Program OTP (POTP) instruction completion  
- Page Program (PP) instruction completion  
- Dual Input Fast Program (DIFP) instruction completion  
- Sector Erase (SE) instruction completion  
Polling During a Write, Program or Erase Cycle  
A further improvement in the time to Write Status Register  
(WRSR), Program OTP (POTP), Program (PP, DIFP), or  
Erase (SE, BE, or CE) can be achieved by not waiting for the  
- Block Erase (BE) instruction completion  
- Chip Erase (CE) instruction completion  
worst case delay (tW, tPP, tSE  
, tBE, tCE). The Write In Progress  
(WIP) bit is provided in the Status Register so that the  
application program can monitor its value, polling it to  
establish when the previous Write cycle, Program cycle or  
Erase cycle is complete.  
„ The Block Protect (BP2, BP1, BP0) bits conjunction with  
Sector Protect (SEC) bit , Top/Bottom (TB) bit and  
Complement Protect (CMP) bit allow part of the memory to  
be configured as read-only. This is the Software Protected  
Mode (SPM).  
Active Power, Stand-by Power and Deep Power-Down  
Modes  
„ The Write Protect ( ) signal allows the Block Protect  
W
(BP2, BP1, BP0) bits, Sector Protect (SEC) bit,  
Top/Bottom (TB) bit, All Protect (APT), Complement  
Protect (CMP) bit and Status Register Protect (SRP1,  
SRP0) bits to be protected. This is the Hardware  
Protected Mode (HPM).  
When Chip Select ( ) is Low, the device is enabled, and in  
S
the Active Power mode.  
When Chip Select ( ) is High, the device is disabled, but  
S
could remain in the Active Power mode until all internal cycles  
have completed (Program, Erase, Write Status Register). The  
device then goes in to the Stand-by Power mode. The device  
consumption drops to ICC1.  
The Deep Power-down mode is entered when the specific  
instruction (the Deep Power-down Mode (DP) instruction) is  
executed. The device consumption drops further to ICC2. The  
device remains in this mode until another specific instruction  
„ In addition to the low power consumption feature, the  
Deep Power-down mode offers extra software protection  
from inadvertent Write, Program and Erase instructions, as  
all instructions are ignored except one particular instruction  
(the Release from Deep Power-down instruction).  
(March, 2012, Version 1.3)  
7
AMIC Technology Corp.