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N04L1630C2BT2-55I 参数 Datasheet PDF下载

N04L1630C2BT2-55I图片预览
型号: N04L1630C2BT2-55I
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, GREEN, TSOP2 - 44]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 12 页 / 194 K
品牌: AMI [ AMI SEMICONDUCTOR ]
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N04L1630C2B
AMI Semiconductor, Inc.
Power Savings with Page Mode Operation (WE
=
V
IH
)
Advance Information
Page Address (A0, A5 - A17)
Open page
...
Word Address (A1 - A4)
Word 1
Word 2
Word 16
CE1
CE2
OE
LB, UB
Note: Page mode operation is a method of addressing the SRAM to save operating current. The internal
organization of the SRAM is optimized to allow this unique operating mode to be used as a valuable power
saving feature.
The only thing that needs to be done is to address the SRAM in a manner that the internal page is left open
and 16-bit words of data are read from the open page. By treating addresses A1-A4 as the least significant
bits and addressing the 16 words within the open page, power is reduced to the page mode value which is
considerably lower than standard operating currents for low power SRAMs.
(DOC# 14-02-042 ReI I ECN# 01-1374
The specifications of this device are subject to change without notice. For latest documentation see http://www.amis.com.