AMIS-720341-A: Contact Image Sensor
Data Sheet
11.0 Sensor’s Operational Specifications
11.1 Absolute Maximum Ratings
Table 7: Absolute Maximum Ratings
Parameters
Symbol
VDD
IDD
Vih
Vil
Maximum Rating
10
Units
V
ma
V
Power supply voltage
Power supply current
Input clock pulse (high level)
Input clock pulse (low level)
Operating temperature
Operating humidity
<2.0
Vdd + 0.5
-0.25
V
Top
0 to 50
°C
Hop
Tstg
Hstg
10 to 85
-25 to 75
10 to 90
RH %
Storage temperature
Storage humidity
°C
RH %
11.2 Recommended Operating Conditions at Room Temperature
Table 8: Recommended Operating Conditions at Room Temperature
Parameters
Power supply
Symbol
Min.
4.5
3.0
0
Typ.
5.0
5.0
Max.
5.5
VDD
0.8
Units
VDD
V
V
V
Input clock pulses high level
Input clock pulse low level
Operating high level exposed output
Clock frequency
Clock pulse duty cycle
Clock pulse high durations
Integration time
Vih (1)
Vil (1)
0
IOUT (2)
Fclk (3)
Duty(4)
tw
See Note 2
2.0
0.1
5.0
MHz
%
25
0.125
0.864
25
µsec
ms
Tint
10
50
Operating temperature
Notes:
Top
°C
(1) Applies to both CP and SP.
(2) The output is a current that is proportional to the charges which are integrated on the phototransistor’s base via photon-to-electron conversion. For its
conversion to voltage pixels see Figure 4, in Section 4.0.
(3) Although the clock frequency, Fclk, will operate the device at less than 100kHz, it is recommended that the device be operated above 500kHz to avoid
complication of leakage current build-up. In applications using long CIS module length, such as an array of image sensor > 27, increases the readout time, i.e.,
increases tint, hence, leakage current build-up occurs.
(4) The clock duty cycle typically is set to 25 percent. However, it can operate with duty cycle as large as 50 percent, which will allow more reset time at the
expense of video pixel readout time. At clock frequencies approaching 5.0MHz it is recommended to use 50 percent duty cycle to allow more time for the signal
pixel to integrate and settle.
AMI Semiconductor – May 06, M-20570-001
12
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