AMIS-40616
LIN Transceiver with 5V Voltage Regulator
Data Sheet
Table 7: DC Characteristics LIN Transmitter
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Pin LIN
VLin_dom_LoSup
VLin_dom_HiSup
VLin_rec
ILIN_lim
Rslave
ILIN_off_dom
ILIN_off_rec
ILIN_no_GND
ILIN_no_Vbb
LIN dominant output voltage
LIN dominant output voltage
LIN recessive output voltage
Short circuit current limitation
Internal pull-up resistance
LIN output current bus in dominant state
LIN output current bus in recessive state
Communication not affected
LIN bus remains operational
TXD = low; Vbb = 7.3V
TXD = low; Vbb = 18V
TXD = high; Ilin = 0mA
VLin = Vbb_max
1.2
2.0
V
V
V
mA
kΩ
mA
µA
mA
µA
Vbb - Vγ (1)
40
20
-1
130
47
33
Driver off; Vbb = 12V
Driver off; Vbb = 12V
Vbb = GND = 12V; 0 < VLin < 18V
Vbb = GND = 0V; 0 < VLin < 18V
20
1
100
-1
Note:
1.
Vγ is the forward diode voltage. Typically (over the complete temperature) Vγ = 1V.
Table 8: DC Characteristics LIN Receiver
Symbol
Pin LIN
Parameter
Conditions
Min.
Typ.
Max.
Unit
Vrec_dom
Vrec_rec
Vrec_cnt
Vrec_hys
Receiver threshold
Receiver threshold
Receiver center voltage
Receiver hysteresis
LIN bus recessive → dominant
LIN bus dominant → recessive
(Vbus_dom + Vbus_rec) / 2
0.4
0.4
0.475
0.05
0.6
0.6
0.525
0.175
Vbb
Vbb
Vbb
Vbb
Table 9: DC Characteristics I/Os
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Pin WAKE
V_wake_th
I_leak
T_wake_min
Pins TxD and STB
Vil
Threshold voltage
0.35
-1
8
0.65
1
54
Vbb
µA
µs
Input leakage current (1)
Debounce time
Vwake = 0V; Vbb = 18V
Sleep mode; rising and falling edge
-0.5
Low level input voltage
High level input voltage
Pull-up resistance to Vcc (1)
0
0.7
50
0.3
1
200
Vcc
Vcc
kΩ
Vih
Rpu
Pin INH
Delta_VH
I_leak
High level voltage drop
Leakage current
IINH = 15mA
Sleep mode; VINH = 0V
0.35
0.75
1
V
µA
-1
Pin EN
Vil
Vih
Low level input voltage
0
0.7
50
0.3
1
200
Vcc
Vcc
kΩ
High level input voltage
Rpd
Pull-down resistance to ground (1)
Pin RxD
Vol
Voh
Low level output voltage
High level output voltage
Isink = 2mA
Isource = -2mA
0
0.8
0.2
1
Vcc
Vcc
Note:
1.
By one of the trimming bits, following reconfiguration can be done during chip-level testing in order to fit the AMIS-40616 into different interface: pins TxD, EN and
STB will have typ. 10kΩ pull-down resistor to ground and pin WAKE will have typ. 10µA pull-down current source.
Table 10: DC Characteristics
Symbol
POR
Parameter
Conditions
Min.
Typ.
Max.
Unit
PORH_Vbb
PORL_Vbb
POR_Vbb_hyst
POR_Vbb_sl
PORH_Vcc
PORL_Vcc
POR_Vcc_hyst
TSD
POR high level Vbb comparator
POR low level Vbb comparator
Hysteresis of POR level Vbb comparator
Maximum slope on Vbb to guarantee POR
POR high level Vcc comparator
4.5
V
V
mV
V/ms
V
3
100
50
3
POR low level Vcc comparator
Hysteresis of POR level Vcc comparator
2
100
V
mV
Tj
Tj_hyst
Junction temperature
Thermal shutdown hysteresis
For shutdown
165
9
195
18
°C
°C
AMI Semiconductor – January 2007, M-20545-001
10
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