FS6132
VCXO Clock Generator IC
Preliminary
AMERICAN MICROSYSTEMS, INC.
January 2000
Electrical Specifications
Table 3: Absolute Maximum Ratings
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These conditions represent a stress rating only, and functional operation of the device at
these or any other conditions above the operational limits noted in this specification is not implied. Exposure to maximum rating conditions for extended conditions may affect device performance,
functionality, and reliability.
PARAMETER
Supply Voltage (V
SS
= ground)
Input Voltage, dc
Output Voltage, dc
Input Clamp Current, dc (V
I
< 0 or V
I
> V
DD
)
Output Clamp Current, dc (V
I
< 0 or V
I
> V
DD
)
Storage Temperature Range (non-condensing)
Ambient Temperature Range, Under Bias
Junction Temperature
Lead Temperature (soldering, 10s)
Input Static Discharge Voltage Protection (MIL-STD 883E, Method 3015.7)
SYMBOL
V
DD
V
I
V
O
I
IK
I
OK
T
S
T
A
T
J
MIN.
V
SS
-0.5
V
SS
-0.5
V
SS
-0.5
-50
-50
-65
-55
MAX.
7
V
DD
+0.5
V
DD
+0.5
50
50
150
125
125
260
2
UNITS
V
V
V
mA
mA
°C
°C
°C
°C
kV
CAUTION: ELECTROSTATIC SENSITIVE DEVICE
Permanent damage resulting in a loss of functionality or performance may occur if this device is subjected to a high-energy elec-
trostatic discharge.
Table 4: Operating Conditions
PARAMETER
Supply Voltage
Ambient Operating Temperature Range
Crystal Resonator Frequency
Crystal Resonator Motional Capacitance
Crystal Loading Capacitance
SYMBOL
V
DD
T
A
f
XTAL
C
1(xtal)
C
L(xtal)
Fundamental Mode
AT cut
AT cut
CONDITIONS/DESCRIPTION
5V ± 10%
MIN.
4.75
0
5
13.5
25
14
TYP.
5
MAX.
5.25
70
18
UNITS
V
°C
MHz
fF
pF
4
ISO9001
1.24.00
AMI [ AMI SEMICONDUCTOR ]
