AMIS-42770 Dual High-Speed CAN Transceiver
For Long Networks
8.0 Electrical Characteristics
8.1 Definitions
Data Sheet
All voltages are referenced to GND. Positive currents flow into the IC. Sinking current means that the current is flowing into the
pin. Sourcing current means that the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in Table 4 may cause permanent device failure. Exposure to absolute maximum ratings for extended
periods may affect device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Max.
Unit
V
CC
V
CANHx
V
CANLx
V
digIO
V
REF
V
tran(CANHx)
V
tran(CANLx)
V
esd(CANLx/CANHx)
V
esd
Latch-up
Supply voltage
DC voltage at pin CANH1/2
DC voltage at pin CANL1/2
DC voltage at digital IO pins (EN1B, EN2B, Rint, Rx0,
Text, Tx0)
DC voltage at pin V
REF
Transient voltage at pin CANH1/2
Transient voltage at pin CANL1/2
ESD voltage at CANH1/2 and CANL1/2 pins
ESD voltage at all other pins
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
(1) Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a, and 3b (see Figure 6).
(2) Standardized human body model (HBM) ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is
±2
kV.
(3) Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
(4) Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
-0.3
0 < V
CC
< 5.25V; no time limit
0 < V
CC
< 5.25V; no time limit
-45
-45
-0.3
-0.3
Note 1
Note 1
Note 2
Note 4
Note 2
Note 4
Note 3
-150
-150
-4
-500
-2
-250
-55
-40
-40
+7
+45
+45
V
CC
+ 0.3
V
CC
+ 0.3
+150
+150
+4
+500
+2
+250
100
+155
+125
+150
V
V
V
V
V
V
V
kV
V
kV
V
mA
°C
°C
°C
T
stg
T
amb
T
junc
Notes:
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(vj-a)
R
th(vj-s
)
Thermal resistance from junction to ambient in SO20 package
Thermal resistance from junction to substrate of bare die
In free air
In free air
85
45
K/W
K/W
AMI Semiconductor
– October 2007, Rev. 1.0
www.amis.com
Specifications subject to change without notice
9
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