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L160DB90VC 参数 Datasheet PDF下载

L160DB90VC图片预览
型号: L160DB90VC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 3.0伏只引导扇区闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1792 K
品牌: AMD [ AMD ]
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DATA SHEET  
Am29LV160D  
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)  
CMOS 3.0 Volt-only Boot Sector Flash Memory  
This product has been retired and is not recommended for designs. For new and current designs, S29AL016D supersedes Am29LV160D and is the factory-recommended migration path  
for this device. Please refer to the S29AL016D data sheet for specifications and ordering information. Availability of this document is retained for reference and historical purposes only.  
DISTINCTIVE CHARACTERISTICS  
Single power supply operation  
Embedded Algorithms  
— Full voltage range: 2.7 to 3.6 volt read and write  
operations for battery-powered applications  
— Embedded Erase algorithm automatically  
preprograms and erases the entire chip or any  
combination of designated sectors  
— Regulated voltage range: 3.0 to 3.6 volt read and  
write operations and for compatibility with high  
performance 3.3 volt microprocessors  
— Embedded Program algorithm automatically  
writes and verifies data at specified addresses  
Manufactured on 0.23 µm process technology  
Minimum 1,000,000 write cycle guarantee  
per sector  
— Fully compatible with 0.32 µm Am29LV160B device  
20-year data retention at 125°C  
— Reliable operation for the life of the system  
Package option  
High performance  
— Access times as fast as 70 ns  
Ultra low power consumption (typical values at  
— 48-ball FBGA  
5 MHz)  
— 48-pin TSOP  
— 200 nA Automatic Sleep mode current  
— 200 nA standby mode current  
— 9 mA read current  
— 44-pin SO  
CFI (Common Flash Interface) compliant  
— 20 mA program/erase current  
— Provides device-specific information to the  
system, allowing host software to easily  
reconfigure for different Flash devices  
Flexible sector architecture  
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and  
thirty-one 64 Kbyte sectors (byte mode)  
Compatibility with JEDEC standards  
— Pinout and software compatible with single-  
power supply Flash  
— One 8 Kword, two 4 Kword, one 16 Kword, and  
thirty-one 32 Kword sectors (word mode)  
— Superior inadvertent write protection  
— Supports full chip erase  
— Sector Protection features:  
Data# Polling and toggle bits  
— A hardware method of locking a sector to prevent any  
program or erase operations within that sector  
— Provides a software method of detecting program  
or erase operation completion  
— Sectors can be locked in-system or via programming  
equipment  
Ready/Busy# pin (RY/BY#)  
— Provides a hardware method of detecting  
program or erase cycle completion (not available  
on 44-pin SO)  
Temporary Sector Unprotect feature allows code  
changes in previously locked sectors  
Unlock Bypass Program Command  
Erase Suspend/Erase Resume  
— Reduces overall programming time when issuing  
multiple program command sequences  
— Suspends an erase operation to read data from,  
or program data to, a sector that is not being  
erased, then resumes the erase operation  
Top or bottom boot block configurations  
available  
Hardware reset pin (RESET#)  
— Hardware method to reset the device to reading  
array data  
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data  
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.  
Publication# 22358  
Issue Date: May 5, 2006  
Rev: B Amendment: 7  
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