D A T A S H E E T
Erase and Programming Performance
Input values into table that were previously TBD.
Added note 3 and 4
Erase and Programming Performance
Changed the typicals and/or maximums of the Chip
Erase Time, Effective Write Buffer Program Time,
Byte/Word Program Time, and Accelerated Effective
Program Time to TBD.
Revision B (May 16, 2003)
Distinctive Characteristics
Revision A+4 (February 16, 2003)
Added typical active read current
Distinctive Characteristics
Global
Corrected performance characteristics.
Converted to full datasheet version.
Product Selector Guide
Modified SecSi Sector Flash Memory Region section
to include ESN references.
Added note 2.
CMOS Compatible
Ordering Information
Corrected Typ and Max values for the ICC 1, 2, and 3
.
Corrected Valid Combinations table.
Added Note.
Erase and Program Operations and Alternate CE#
Controlled Erase and Program Operations
AC Characteristics
Changed Accelerated Effective Write Buffer Program
Operation value.
Input values in the tWHWH1 and tWHWH2 parameters in
the Erase and Program Options table that were previ-
ously TBD. Also, added note 5.
Erase and Programming Performance
Input values into table that were previously TBD.
Input values in the tWHWH1 and tWHWH2 parameters in
the Alternate CE# Controlled Erase and Program Op-
tions table that were previously TBD. Also, added note
5.
Modified notes.
Removed Word references.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
60
Am29LV320MT/B
May 16, 2003
AMD [ AMD ]
