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AM29LV320MB110RPC 参数 Datasheet PDF下载

AM29LV320MB110RPC图片预览
型号: AM29LV320MB110RPC
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位(2M ×16位/ 4米×8位)的MirrorBit 3.0伏只引导扇区闪存 [32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit 3.0 Volt-only Boot Sector Flash Memory]
分类和应用: 闪存
文件页数/大小: 61 页 / 1335 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
ERASE AND PROGRAMMING PERFORMANCE  
Parameter  
Typ (Note 1)  
Max (Note 2)  
Unit  
sec  
sec  
µs  
Comments  
Sector Erase Time  
Chip Erase Time  
0.5  
32  
3.5  
64  
Excludes 00h programming  
prior to erasure (Note 6)  
Byte  
Word  
Byte  
60  
600  
600  
540  
540  
1200  
38  
Single Word/Byte Program Time (Note 3)  
60  
µs  
54  
µs  
Accelerated Single Word/Byte Program Time  
(Note 3)  
Word  
54  
µs  
Total Write Buffer Program Time (Note 4)  
Effective Write Buffer Program Time (Note 5)  
240  
7.5  
15  
µs  
Excludes system level  
overhead (Note 7)  
Per Byte  
Per Word  
µs  
75  
µs  
Total Accelerated Write Buffer Program Time (Note 4)  
200  
6.25  
12.5  
31.5  
1040  
33  
µs  
Per Byte  
Per Word  
µs  
Effective Accelerated Write Buffer Program Time  
(Note 5)  
65  
µs  
Chip Program Time  
73  
sec  
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, Programming specification assume that  
all bits are programmed to 00h.  
2. Maximum values are measured at VCC = 3.0, worst case temperature. Maximum values are valid up to and including 100,000  
program/erase cycles.  
3. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.  
4. For 1-16 words or 1-32 bytes programmed in a single write buffer programming operation.  
5. Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.  
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.  
7. System-level overhead is the time required to execute the command sequence (s) for the program command. See Tables 12 and  
13 for further information on command definitions.  
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.  
LATCHUP CHARACTERISTICS  
Description  
Min  
Max  
Input voltage with respect to VSS on all pins except I/O pins  
(including A9, OE#, and RESET#)  
–1.0 V  
12.5 V  
Input voltage with respect to VSS on all I/O pins  
–1.0 V  
VCC + 1.0 V  
+100 mA  
V
CC Current  
–100 mA  
Note: Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.  
May 16, 2003  
Am29LV320MT/B  
53  
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