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AM29LV017D-120EC 参数 Datasheet PDF下载

AM29LV017D-120EC图片预览
型号: AM29LV017D-120EC
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位) CMOS 3.0伏只统一部门快闪记忆体 [16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 48 页 / 952 K
品牌: AMD [ AMD ]
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REVISION SUMMARY  
Distinctive Characteristics  
Revision A (October 1997)  
Changed process technology to 0.32 µm.  
First release.  
Table 8, Command Definitions  
Revision B (October 1997)  
Global  
The CFI Query command is now included in the table.  
DC Characteristics  
Deleted SO package from data sheet.  
Moved V max test condition for I  
specifications to  
CC  
CC  
notes.  
Revision C (January 1998)  
Alternate CE# Controlled Erase/Program  
Operations  
Figure 21, Sector Protect/Unprotect Timing  
Diagram  
Changed t from 45 to 35 ns on 80R and 90 speed  
options.  
Changed timing specifications in diagram to match  
those in Figure 2, In-System Sector Protect/Unprotect  
Algorithms.  
CP  
Revision C+1 (February 1998)  
Global  
Revision D (January 1999)  
Distinctive Characteristics  
Changed data sheet status to Preliminary.  
Added bullet for 20-year data retention at 125°C: reli-  
Reset Command  
able operation for the life of the system  
Deleted the last paragraph in this section.  
Connection Diagrams  
Revision C+2 (March 1998)  
Updated FBGA figure.  
Figure 2, In-System Sector Protect/Unprotect  
Algorithms (0.35 µm devices)  
Ordering Information  
Valid Combinations for FBGA Packages: New Table  
In the sector protect algorithm, added a “Reset  
PLSCNT=1” box in the path from “Protect another sec-  
tor?” back to setting up the next sector address.  
AC Characteristics  
Corrected addresses in program, erase, and alternate  
CE# controlled write timing diagrams.  
AC Characteristics  
Erase/Program Operations; Alternate CE# Controlled  
Physical Dimensions  
Erase/Program Operations: Corrected the notes refer-  
Changed package to FBC048.  
ence for t  
and t  
. These parameters are  
WHWH1  
WHWH2  
100% tested. Corrected the note reference for t  
This parameter is not 100% tested.  
.
VCS  
Revision D+1 (April 12, 1999)  
Connection Diagrams  
Temporary Sector Unprotect Table  
In the FBGA figure, corrected the callout; the figure  
shows the top view, balls facing down.  
Added note reference for t  
100% tested.  
. This parameter is not  
VIDR  
Revision E (February 2, 2000)  
Figure 21, Sector Protect/Unprotect Timing  
Diagram  
Global  
A valid address is not required for the first write cycle;  
only the data 60h.  
The process technology has changed to 0.23 µm, and  
is indicated in the part number by the “D” suffix. The 70  
ns speed option is now offered in the full voltage range  
instead of the regulated voltage range. The 70 ns  
devices are also now available in the industrial temper-  
ature range. The 80 ns speed option has been deleted.  
The extended temperature range is no longer available.  
All other parameters and functions remain unchanged.  
Erase and Programming Performance  
In Note 2, the worst case endurance is now 1 million cycles.  
Revision C+3 (August 1998)  
Global  
Added -70R speed option, and changed -80R speed  
option to -80.  
Ordering Information  
Deleted the “U” designator from ordering part numbers  
for FBGA devices.  
48  
Am29LV017D  
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