ERASE AND PROGRAMMING PERFORMANCE
Limits
Typ
Max
Parameter
Chip Erase Time
Min
(Note 1) (Note 2)
Unit
sec
Comments
1
10
3
Excludes 00h programming prior to erasure
Excludes system-level overhead
Chip Programming Time
Write/Erase Cycles
0.5
sec
10,000
Cycles
Notes:
1. 25°C, 12 V V
.
PP
2. Maximum time specified is lower than worst case. Worst case is derived from the Flasherase/Flashrite pulse count
(Flasherase = 1000 max and Flashrite = 25 max). Typical worst case for program and erase is significantly less than the actual
device limit.
LATCHUP CHARACTERISTICS
Min
Max
Input Voltage with respect to V on all pins except I/O pins (Including A9 and V
)
PP
–1.0 V
–1.0 V
–100 mA
13.5 V
SS
Input Voltage with respect to V on all pins I/O pins
V
+ 1.0 V
CC
SS
Current
+100 mA
Includes all pins except V . Test conditions: V = 5.0 V, one pin at a time.
CC
CC
PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Input Capacitance
Output Capacitance
Input Capacitance
Test Conditions
Typ
8
Max
10
Unit
pF
C
V
= 0
IN
IN
C
V
= 0
8
12
pF
OUT
OUT
C
V
V = 0
PP
8
12
pF
IN2
PP
Note: Sampled, not 100% tested. Test conditions T = 25°C, f = 1.0 MHz.
A
DATA RETENTION
Parameter
Test Conditions
Min
10
Unit
Years
Years
150°C
125°C
Minimum Pattern Data Retention Time
20
Am28F256
31
AMD [ AMD ]
