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AM28F256-120PC 参数 Datasheet PDF下载

AM28F256-120PC图片预览
型号: AM28F256-120PC
PDF下载: 下载PDF文件 查看货源
内容描述: 256千位(是32K ×8位)的CMOS 12.0伏,整体擦除闪存 [256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory]
分类和应用: 闪存内存集成电路光电二极管
文件页数/大小: 35 页 / 467 K
品牌: AMD [ AMD ]
 浏览型号AM28F256-120PC的Datasheet PDF文件第23页浏览型号AM28F256-120PC的Datasheet PDF文件第24页浏览型号AM28F256-120PC的Datasheet PDF文件第25页浏览型号AM28F256-120PC的Datasheet PDF文件第26页浏览型号AM28F256-120PC的Datasheet PDF文件第28页浏览型号AM28F256-120PC的Datasheet PDF文件第29页浏览型号AM28F256-120PC的Datasheet PDF文件第30页浏览型号AM28F256-120PC的Datasheet PDF文件第31页  
AC Characteristics—Write/Erase/Program Operations  
Parameter Symbols  
Am28F256 Speed Options  
JEDEC  
Standard  
Parameter Description  
Write Cycle Time (Note 4)  
Address Set-up Time  
Address Hold Time  
-70  
70  
0
-90  
90  
0
-120  
120  
0
-150  
150  
0
-200  
200  
0
Unit  
ns  
t
t
Min  
Min  
Min  
Min  
Min  
AVAV  
WC  
t
t
ns  
AVWL  
WLAX  
DVWH  
WHDX  
AS  
AH  
DS  
DH  
t
t
45  
45  
10  
45  
45  
10  
50  
60  
75  
ns  
t
t
Data Setup Time  
50  
50  
50  
ns  
t
t
Data Hold Time  
10  
10  
10  
ns  
Write Recovery Time  
before Read  
t
t
t
Min  
Min  
6
0
6
0
6
0
6
0
6
0
µs  
µs  
WHGL  
GHWL  
WR  
Read Recovery Time  
before Write  
t
t
Chip Enable Set-up Time  
Chip Enable Hold Time  
Write Pulse Width  
Min  
Min  
Min  
0
0
0
0
0
0
0
0
0
0
ns  
ns  
ns  
ELWL  
WHEH  
WLWH  
CS  
CH  
WP  
t
t
t
t
45  
45  
50  
60  
60  
Write Pulse  
Width HIGH  
t
t
Min  
Min  
Min  
Min  
Min  
Min  
Min  
Min  
20  
10  
20  
10  
20  
10  
20  
10  
20  
10  
ns  
µs  
ms  
ns  
µs  
ns  
ns  
ns  
WHWL  
WPH  
Duration of Programming  
Operation (Note 2)  
t
t
WHWH1  
WHWH2  
Duration of  
Erase Operation (Note 2)  
9.5  
100  
50  
9.5  
100  
50  
9.5  
100  
50  
9.5  
100  
50  
9.5  
100  
50  
V
Setup Time to  
PP  
t
VPEL  
Chip Enable LOW (Note 4)  
V
Set-up Time to  
CC  
t
VCS  
Chip Enable LOW (Note 4)  
V
Rise Time  
PP  
t
500  
500  
100  
500  
500  
100  
500  
500  
100  
500  
500  
100  
500  
500  
100  
VPPR  
90% V  
(Note 4)  
PPH  
V
Fall Time  
PP  
t
VPPF  
10% V  
(Note 4)  
PPL  
V
< V  
LKO  
CC  
t
LKO  
to Reset (Note 4)  
Notes:  
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC  
Characteristics for Read Only operations.  
2. Maximum pulse widths not required because the on-chip program/erase stop timer will terminate the pulse widths internally  
on the device.  
3. Chip-Enable Controlled Writes: Write operations are driven by the valid combination of Chip-Enable and Write-Enable. In  
systems where Chip-Enable defines the Write Pulse Width (within a longer Write-Enable timing waveform) all setup, hold and  
inactive Write-Enable times should be measured relative to the Chip-Enable waveform.  
4. Not 100% tested.  
Am28F256  
27  
 
 
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