欢迎访问ic37.com |
会员登录 免费注册
发布采购

A800DB12UF 参数 Datasheet PDF下载

A800DB12UF图片预览
型号: A800DB12UF
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1一M× 8位/ 512的K× 16位) CMOS 1.8伏只超低电压闪存 [8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 1066 K
品牌: AMD [ AMD ]
 浏览型号A800DB12UF的Datasheet PDF文件第25页浏览型号A800DB12UF的Datasheet PDF文件第26页浏览型号A800DB12UF的Datasheet PDF文件第27页浏览型号A800DB12UF的Datasheet PDF文件第28页浏览型号A800DB12UF的Datasheet PDF文件第30页浏览型号A800DB12UF的Datasheet PDF文件第31页浏览型号A800DB12UF的Datasheet PDF文件第32页浏览型号A800DB12UF的Datasheet PDF文件第33页  
D A T A S H E E T  
TEST CONDITIONS  
Table 8. Test Specifications  
-90,  
-120,  
Test Condition  
-100  
-150  
Unit  
Output Load  
1 TTL gate  
Device  
Under  
Test  
Output Load Capacitance, CL  
(including jig capacitance)  
30  
100  
pF  
Input Rise and Fall Times  
Input Pulse Levels  
5
0.0–2.0  
ns  
V
C
L
Input timing measurement  
reference levels  
1.0  
1.0  
V
V
Output timing measurement  
reference levels  
Figure 11. Test Setup  
Table 9. Key to Switching Waveforms  
WAVEFORM  
INPUTS  
OUTPUTS  
Steady  
Changing from H to L  
Changing from L to H  
Don’t Care, Any Change Permitted  
Does Not Apply  
Changing, State Unknown  
Center Line is High Impedance State (High Z)  
2.0 V  
0.0 V  
1.0 V  
1.0 V  
Input  
Measurement Level  
Output  
Figure 12. Input Waveforms and Measurement Levels  
January 23, 2007 27546A6  
Am29SL800D  
27  
 复制成功!