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A400DT10VF 参数 Datasheet PDF下载

A400DT10VF图片预览
型号: A400DT10VF
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 1.8伏只超低电压闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 41 页 / 775 K
品牌: AMD [ AMD ]
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A D V A N C E I N F O R M A T I O N  
ERASE AND PROGRAMMING PERFORMANCE  
Parameter  
Typ (Note 1)  
Max (Note 2)  
Unit  
s
Comments  
Sector Erase Time  
Chip Erase Time  
0.7  
38  
10  
12  
5
15  
Excludes 00h programming  
prior to erasure (Note 4)  
s
Byte Programming Time  
Word Programming Time  
300  
360  
40  
µs  
µs  
s
Excludes system level  
overhead (Note 5)  
Byte Mode  
Word Mode  
Chip Programming Time  
(Note 3)  
3.5  
30  
s
Notes:  
1. Typical program and erase times assume the following conditions: 25°C, 1.8 V VCC, 1,000,000 cycles. Additionally, programming  
typicals assume checkerboard pattern.  
2. Under worst case conditions of 90°C, VCC = 1.8 V, 1,000,000 cycles.  
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program  
faster than the maximum program times listed.  
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.  
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 5  
on page 17 for further information on command definitions.  
6. The device has a minimum guaranteed erase and program cycle endurance of 1,000,000 cycles.  
LATCHUP CHARACTERISTICS  
Description  
Min  
Max  
Input voltage with respect to V on all pins except I/O pins  
(including A9, OE#, and RESET#)  
SS  
–1.0 V  
11.0 V  
Input voltage with respect to V on all I/O pins  
–0.5 V  
V
+ 0.5 V  
CC  
SS  
V
Current  
–100 mA  
+100 mA  
CC  
Includes all pins except V . Test conditions: V = 1.8 V, one pin at a time.  
CC  
CC  
TSOP PIN AND BGA PACKAGE CAPACITANCE  
Parameter Symbol  
Parameter Description  
Test Setup  
Typ  
6
Max  
7.5  
5.0  
12  
Unit  
pF  
pF  
pF  
pF  
pF  
pF  
TSOP  
C
Input Capacitance  
V
= 0  
IN  
IN  
Fine-pitch BGA  
TSOP  
4.2  
8.5  
5.4  
7.5  
3.9  
C
Output Capacitance  
V
= 0  
OUT  
OUT  
Fine-pitch BGA  
TSOP  
6.5  
9
C
Control Pin Capacitance  
V
= 0  
IN2  
IN  
Fine-pitch BGA  
4.7  
Notes:  
1. Sampled, not 100% tested.  
2. Test conditions T = 25°C, f = 1.0 MHz.  
A
DATA RETENTION  
Parameter  
Test Conditions  
150°C  
Min  
10  
Unit  
Years  
Years  
Minimum Pattern Data Retention Time  
125°C  
20  
April 13, 2005 Rev. A Amend. +1  
Am29SL400D  
37  
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