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A400DT10VF 参数 Datasheet PDF下载

A400DT10VF图片预览
型号: A400DT10VF
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 1.8伏只超低电压闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 41 页 / 775 K
品牌: AMD [ AMD ]
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A D V A N C E I N F O R M A T I O N  
AC CHARACTERISTICS  
555 for program  
2AA for erase  
PA for program  
SA for sector erase  
555 for chip erase  
Data# Polling  
Addresses  
PA  
tWC  
tWH  
tAS  
tAH  
WE#  
OE#  
tGHEL  
tWHWH1 or 2  
tCP  
CE#  
Data  
tWS  
tCPH  
tDS  
tBUSY  
tDH  
DQ7#  
DOUT  
tRH  
A0 for program  
55 for erase  
PD for program  
30 for sector erase  
10 for chip erase  
RESET#  
RY/BY#  
Notes:  
1. PA = program address, PD = program data, DQ7# = complement of the data written, D  
2. Figure indicates the last two bus cycles of command sequence.  
3. Word mode address used as an example.  
= data written  
OUT  
Figure 24. Alternate CE# Controlled Write Operation Timings  
36  
Am29SL400D  
Rev. A Amend. +1 April 13, 2005  
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