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A400CT15VF 参数 Datasheet PDF下载

A400CT15VF图片预览
型号: A400CT15VF
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位( 512K的×8位/ 256千×16位) CMOS 1.8伏只超低电压闪存 [4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 44 页 / 850 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
DEVICE BUS OPERATIONS  
This section describes the requirements and use of the de-  
vice bus operations, which are initiated through the internal  
command register. The command register itself does not oc-  
cupy any addressable memory location. The register is com-  
posed of latches that store the commands, along with the  
address and data information needed to execute the com-  
mand. The contents of the register serve as inputs to the in-  
ternal state machine. The state machine outputs dictate the  
function of the device. Table 1 lists the device bus opera-  
tions, the inputs and control levels they require, and the re-  
sulting output. The following subsections describe each of  
these operations in further detail.  
Table 1. Am29SL400C Device Bus Operations  
DQ8–DQ15  
BYTE#  
Addresses  
(Note 1)  
DQ0–  
DQ7  
BYTE#  
= VIH  
Operation  
CE#  
L
OE# WE# RESET#  
= VIL  
Read  
Write  
L
H
L
H
H
AIN  
AIN  
DOUT  
DIN  
DOUT  
DIN  
DQ8–DQ14 = High-Z,  
DQ15 = A-1  
L
H
VCC  
0.2 V  
±
VCC ±  
0.2 V  
Standby  
X
X
X
High-Z  
High-Z  
High-Z  
Output Disable  
Reset  
L
H
X
H
X
H
L
X
X
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
High-Z  
X
Sector Address, A6  
= L, A1 = H,  
A0 = L  
Sector Protect (Note 2)  
L
H
L
VID  
DIN  
X
X
Sector Address, A6  
= H, A1 = H,  
A0 = L  
Sector Unprotect (Note 2)  
L
H
X
L
VID  
VID  
DIN  
DIN  
X
X
Temporary Sector Unprotect  
X
X
AIN  
DIN  
High-Z  
Legend:  
L = Logic Low = VIL, H = Logic High = VIH, VID = 10 ± 1.0 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out  
Notes:  
1. Addresses are A17:A0 in word mode (BYTE# = VIH), A17:A-1 in byte mode (BYTE# = VIL).  
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector  
Protection/Unprotection” section.  
that no spurious alteration of the memory content occurs  
Word/Byte Configuration  
during the power transition. No command is necessary in  
The BYTE# pin controls whether the device data I/O pins  
this mode to obtain array data. Standard microprocessor  
DQ15–DQ0 operate in the byte or word configuration. If the  
read cycles that assert valid addresses on the device ad-  
BYTE# pin is set at logic ‘1’, the device is in word configura-  
dress inputs produce valid data on the device data outputs.  
tion, DQ15–DQ0 are active and controlled by CE# and OE#.  
The device remains enabled for read access until the com-  
mand register contents are altered.  
If the BYTE# pin is set at logic ‘0’, the device is in byte con-  
figuration, and only data I/O pins DQ0–DQ7 are active and  
controlled by CE# and OE#. The data I/O pins DQ8–DQ14  
are tri-stated, and the DQ15 pin is used as an input for the  
LSB (A-1) address function.  
See Reading Array Data‚ on page 15 for more information.  
Refer to the AC Read Operations table for timing specifica-  
tions and to Figure 14‚ on page 28 for the timing diagram.  
ICC1 in the DC Characteristics table represents the active  
current specification for reading array data.  
Requirements for Reading Array Data  
Writing Commands/Command Sequences  
To read array data from the outputs, the system must drive  
the CE# and OE# pins to VIL. CE# is the power control and  
selects the device. OE# is the output control and gates array  
data to the output pins. WE# should remain at VIH. The  
BYTE# pin determines whether the device outputs array  
data in words or bytes.  
To write a command or command sequence (which includes  
programming data to the device and erasing sectors of  
memory), the system must drive WE# and CE# to VIL, and  
OE# to VIH.  
For program operations, the BYTE# pin determines whether  
the device accepts program data in bytes or words. Refer  
to Word/Byte Configuration‚ on page 9 for more information.  
The internal state machine is set for reading array data upon  
device power-up, or after a hardware reset. This ensures  
January 23, 2007 Am29SL400C_00_A6  
Am29SL400C  
9
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