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A160CB12VF 参数 Datasheet PDF下载

A160CB12VF图片预览
型号: A160CB12VF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 1.8伏只超低电压闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1031 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
During the unlock bypass mode, only the Unlock  
Bypass Program and Unlock Bypass Reset commands  
are valid. To exit the unlock bypass mode, the system  
must issue the two-cycle unlock bypass reset  
command sequence. The first cycle must contain the  
data 90h; the second cycle the data 00h. Addresses  
are don’t cares. The device then returns to reading  
array data.  
START  
Write Program  
Command Sequence  
The device offers accelerated program operations  
through the WP#/ACC pin. This function is intended  
only to speed in-system programming of the device  
during system production. When the system asserts  
VHH on the WP#/ACC pin, the device automatically  
enters the Unlock Bypass mode. The system may then  
write the two-cycle Unlock Bypass program command  
sequence. The device uses the higher voltage on the  
WP#/ACC pin to accelerate the operation. Note that the  
WP#/ACC pin must not be at VHH for any operation  
other than accelerated programming, or device  
damage may result. In addition, the WP#/ACC pin must  
not be left floating or unconnected; inconsistent  
behavior of the device may result.  
Data Poll  
from System  
Embedded  
Program  
algorithm  
in progress  
Verify Data?  
Yes  
No  
No  
Increment Address  
Last Address?  
Yes  
Figure 3 illustrates the algorithm for the program oper-  
ation. See “Erase/Program Operations” on page 38 for  
parameters, and Figure 17, on page 39 for timing  
diagrams.  
Programming  
Completed  
Note: See Table 12, on page 26 for program command  
sequence.  
Figure 3. Program Operation  
January 23, 2007 21635C5  
Am29SL160C  
23  
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