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A160CB12VF 参数 Datasheet PDF下载

A160CB12VF图片预览
型号: A160CB12VF
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位(2M ×8位/ 1的M× 16位) CMOS 1.8伏只超低电压闪存 [16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory]
分类和应用: 闪存
文件页数/大小: 52 页 / 1031 K
品牌: AMD [ AMD ]
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D A T A S H E E T  
Table 11. Primary Vendor-Specific Extended Query  
Addresses  
Addresses  
(Word Mode)  
(Byte Mode)  
Data  
Description  
40h  
41h  
42h  
80h  
82h  
84h  
0050h  
0052h  
0049h  
Query-unique ASCII string “PRI”  
43h  
44h  
86h  
88h  
0031h  
0030h  
Major version number, ASCII  
Minor version number, ASCII  
Address Sensitive Unlock  
0 = Required, 1 = Not Required  
45h  
46h  
47h  
48h  
8Ah  
8Ch  
8Eh  
90h  
0000h  
0002h  
0001h  
0001h  
Erase Suspend  
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write  
Sector Protect  
0 = Not Supported, X = Number of sectors in per group  
Sector Temporary Unprotect  
00 = Not Supported, 01 = Supported  
Sector Protect/Unprotect scheme  
49h  
92h  
0004h  
01 = 29F040 mode, 02 = 29F016 mode,  
03 = 29F400 mode, 04 = 29LV800A mode  
Simultaneous Operation  
00 = Not Supported, 01 = Supported  
4Ah  
4Bh  
4Ch  
94h  
96h  
98h  
0000h  
0000h  
0000h  
Burst Mode Type  
00 = Not Supported, 01 = Supported  
Page Mode Type  
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page  
Erase Suspend mode, the system may once again  
read array data with the same exception. See “Erase  
Suspend/Erase Resume Commands” on page 24 for  
more information on this mode.  
COMMAND DEFINITIONS  
Writing specific address and data commands or  
sequences into the command register initiates device  
operations. Table 12, on page 26 defines the valid reg-  
ister command sequences. Writing incorrect address  
and data values or writing them in the improper  
sequence resets the device to reading array data.  
The system must issue the reset command to re-  
enable the device for reading array data if DQ5 goes  
high, or while in the autoselect mode. See “Reset Com-  
mand”, next.  
All addresses are latched on the falling edge of WE# or  
CE#, whichever happens later. All data is latched on  
the rising edge of WE# or CE#, whichever happens  
first. Refer to the appropriate timing diagrams in “AC  
Characteristics” on page 35.  
See also “Requirements for Reading Array Data” on  
page 9 for more information. The table provides the  
read parameters, and Figure 13, on page 35 shows the  
timing diagram.  
Reading Array Data  
Reset Command  
The device is automatically set to reading array data  
after device power-up. No commands are required to  
retrieve data. The device is also ready to read array  
data after completing an Embedded Program or  
Embedded Erase algorithm.  
Writing the reset command to the device resets the  
device to reading array data. Address bits are don’t  
care for this command.  
The reset command may be written between the  
sequence cycles in an erase command sequence  
before erasing begins. This resets the device to reading  
array data. Once erasure begins, however, the device  
ignores reset commands until the operation is  
complete.  
After the device accepts an Erase Suspend command,  
the device enters the Erase Suspend mode. The  
system can read array data using the standard read  
timings, except that if it reads at an address within  
erase-suspended sectors, the device outputs status  
data. After completing a programming operation in the  
The reset command may be written between the  
sequence cycles in a program command sequence  
January 23, 2007 21635C5  
Am29SL160C  
21  
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