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S5920QRC 参数 Datasheet PDF下载

S5920QRC图片预览
型号: S5920QRC
PDF下载: 下载PDF文件 查看货源
内容描述: [PCI Bus Controller, CMOS, PQFP160, 28 X 28 MM, 3.37 MM HEIGHT, GREEN, PLASTIC, QFP-160]
分类和应用: 时钟数据传输PC外围集成电路
文件页数/大小: 165 页 / 2405 K
品牌: AMCC [ APPLIED MICRO CIRCUITS CORPORATION ]
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Revision 1.01 – September 21, 2005  
S5920 – PCI Product: Quality System Overview  
AMCC’S RELIABILITY VIGIL  
Data Book  
Periodic Operating Life and Environmental Testing  
Performed on a product from each process  
family quarterly.  
AMCC’s internal reliability vigil consists of three  
phases:  
1000 hour operating life test (minimum),  
Method 5005, Group C.  
New/changed processes and material qualifi-  
cations  
Temperature cycling per Method 1010, 100  
cycles, condition C: –65°C/150°C  
In-process Quality monitors  
Periodic operating life and environmental test-  
ing  
Environmental testing per AMCC standard test  
procedures. Consult factory for further details.  
New/Changed Wafer Processes and Material Quali-  
fications  
Final Measure and Assurance of Quality  
The cost of defects depends on when the failure  
occurs. For example, costs rise significantly as unde-  
tected defective ICs are integrated into systems. High  
quality parts cut costs substantially, and the extra qual-  
ity built into every AMCC device means added value to  
our customers.  
In order to initially release a device to production a  
standard set of MIL-STD-883 tests must be completed  
successfully. These tests include:  
Wafer Process and Design  
Operating Life Method 1005  
ESD Characterization Method 3015  
Wire Bond Pull Method 2011  
To achieve maximum quality, AMCC employs 100%  
testing of all devices, followed by stringent QA  
sampling.  
Thermal Shock or Method 1011 or 1010 Tem-  
perature Cycling  
AMCC performs QA sampling measurements at full  
specification temperature, both DC and AC, to achieve  
the tightest AQLs in the industry.  
Package and Related Materials  
Selected Subgroups of MIL-STD-883, Method  
5005, Group B and D  
RADIATION HARDNESS  
High energy radiation can cause structural changes in  
the silicon and silicon dioxide crystal lattice by displac-  
ing atoms from their normal crystal sites. These  
changes can be responsible for increased junction  
leakage, degraded transistor current gain (b), and  
increased parasitic Si/SiO2 interface leakage currents.  
The damage is generally induced by neutrons, X-rays,  
and gamma rays. The effects of the damage induced  
by this radiation can change both AC and DC parame-  
ters, affect functional performance, and, in severe  
cases, destroy the device.  
AMCC adheres to MIL-I-38535 with regards to  
changes.  
If changes to production released devices are deter-  
mined to be major, the appropriate qualification testing  
must be successfully completed prior to change  
approval.  
In-Process Quality Monitors  
CV plots  
Airborne particle count  
Bacteria, particle count, and resistivity on DI  
water  
Certain of AMCC’s high performance products are  
inherently radiation resistant. The radiation resistance  
of AMCC IC’s is the result of the small geometries, the  
structure of the fabrication process itself, and the use  
of ECL logic within the device. Contact your AMCC  
representative regarding radiation resistance charac-  
teristics associated with a specific product.  
ESD work stations and procedures  
In-line testing of process gases  
Temperature and humidity control  
SPC in wafer fabrication  
SEM of all military lots  
AMCC Confidential and Proprietary  
DS1596  
21  
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