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CS5320 参数 Datasheet PDF下载

CS5320图片预览
型号: CS5320
PDF下载: 下载PDF文件 查看货源
内容描述: PCI匹配制造商, 3.3V [PCI Match Maker, 3.3V]
分类和应用: PC
文件页数/大小: 160 页 / 1544 K
品牌: AMCC [ APPLIED MICRO CIRCUITS CORPORATION ]
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Revision 5.03 – June 14, 2006  
S5320 – PCI Match Maker: Initialization  
Data Sheet  
could not use the busy bit to determine when to start a  
new write, but would need to insert a delay (deter-  
mined by the “shut down” time of the nvRAM, between  
5-10 ms). Fortunately, the S5320 implements the  
Acknowledge Polling scheme described above, which  
will not take away the busy bit until the write is truly fin-  
ished, and the external nvRAM is available for  
accesses.  
the read data in RCR(32:16) may not be valid.  
This flag remains set until the start of the next  
read/write operation.  
When performing a word/double-word RCR  
access, you can combine the data and control in  
the same command. The following is the sequence  
for a write:  
1. Verify that busy bit, RCR(31), is not set by read-  
ing RCR(31). If set, hold off starting the write  
sequence (repeat step 1 until the bit clears).  
The following sequence is used to perform nvRAM  
writes when accessing the RCR/ARCR in a byte-  
wide fashion:  
2. Write to RCR(31:29) = “100” and RCR(23:16)  
with the low address byte. This will directly load  
NVRAM_LOW_ADDR with RCR(23:16).  
1. Verify that busy bit, RCR(31), is not set by read-  
ing RCR(31). If set, hold off starting the read  
sequence (repeat step 1 until this bit clears).  
3. Write to RCR(31:29) = “101” and RCR(23:16)  
with the high address byte. This will directly load  
NVRAM_HIGH_ADDR with RCR(23:16).  
2. Write to RCR(31:29) = “100”, the command to  
load the low address byte. This will assert the  
internal signal LOAD_LOW_ADDR, which is used  
to enable the loading of the low-address register  
(NVRAM_LOW_ADDR).  
4. Write to RCR(31:29) = “110” and RCR(23:16)  
with the write data. This will directly load the write  
data register with RCR(23:16). This will also set  
the busy bit, RCR(31). The nvRAM interface con-  
troller will now initiate a write operation to the  
external nvRAM.  
3. Write to RCR(23:16) with the low address byte.  
Since signal LOAD_LOW_ADDR is asserted, the  
data will be written to the register  
NVRAM_LOW_ADDR.  
As  
long  
as  
5. Poll the busy bit until it is no longer set. Once  
cleared, it is now safe to perform another write/  
read operation to the external nvRAM. In addi-  
tion, evaluate the XFER_FAIL flag (bit 28) to  
determine whether the transfer was successful or  
not. If XFER_FAIL is asserted, this indicates that  
a transfer to the nvRAM did not receive an  
ACKNOWLEDGE. The write should not be con-  
sidered successful. This flag remains set until the  
start of the next read/write operation.  
LOAD_LOW_ADDR is asserted, a write to  
RCR(23:16) will continue to overwrite register  
NVRAM_LOW_ADDR.  
4. Write to RCR(31:29) = “101”, the command to  
load the high address byte. This will assert the  
internal signal LOAD_HIGH_ADDR, which is  
used to enable the loading of the high-address  
register (NVRAM_HIGH_ADDR).  
5. Write to RCR(23:16) with the high address byte.  
Since signal LOAD_HIGH_ADDR is asserted, the  
data will be written to the register  
NVRAM_HIGH_ADDR. Note that as the nvRAM  
address is limited to 11-bits, only the 3-lsb’s of  
this write data is actually used. As long as  
LOAD_HIGH_ADDR is asserted, a write to  
RCR(23:16) will continue to overwrite register  
NVRAM_HIGH_ADDR.  
The following sequence is used for a read:  
1. Verify that the busy bit, RCR(31), is not set by  
reading RCR(31). If set, hold off starting the read  
sequence (repeat step 1 until the bit clears).  
2. Write to RCR(31:29) = “100” and RCR(23:16)  
with the low address byte. This will directly load  
NVRAM_LOW_ADDR with RCR(23:16).  
6. Write to RCR(31:29) = “111”, the command to  
start the nvRAM read operation. This will set the  
busy bit, RCR(31). The nvRAM interface control-  
ler will now initiate a read operation to the  
external nvRAM.  
3. Write to RCR(31:29) = “101” and RCR(23:16)  
with the high address byte. This will directly load  
NVRAM_HIGH_ADDR with RCR(23:16).  
4. Write to RCR(31:29) = “111”. This will set the  
busy bit, RCR(31). The nvRAM interface control-  
ler will now initiate a read operation with the  
external nvRAM.  
7. Poll the busy bit until it is no longer set. Once  
cleared, the read data will be located in  
RCR(23:16). In addition, evaluate the  
XFER_FAIL flag (bit 28) to determine whether the  
transfer was successful or not. If XFER_FAIL is  
asserted, this indicates that a transfer to the  
nvRAM did not receive an ACKNOWLEDGE, and  
5. Poll the busy bit until it is no longer set. Once  
cleared, the read data will be located in  
RCR(23:16). In addition, evaluate the  
XFER_FAIL flag (bit 28) to determine whether the  
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