欢迎访问ic37.com |
会员登录 免费注册
发布采购

EP3C55F484C6N 参数 Datasheet PDF下载

EP3C55F484C6N图片预览
型号: EP3C55F484C6N
PDF下载: 下载PDF文件 查看货源
内容描述: [Field Programmable Gate Array, 55856 CLBs, 472.5MHz, 55856-Cell, CMOS, PBGA484, 23 X 23 MM, 2.60 MM HEIGHT, 1 MM PITCH, LEAD FREE, FBGA-484]
分类和应用: 时钟可编程逻辑
文件页数/大小: 34 页 / 367 K
品牌: ALTERA [ ALTERA CORPORATION ]
 浏览型号EP3C55F484C6N的Datasheet PDF文件第4页浏览型号EP3C55F484C6N的Datasheet PDF文件第5页浏览型号EP3C55F484C6N的Datasheet PDF文件第6页浏览型号EP3C55F484C6N的Datasheet PDF文件第7页浏览型号EP3C55F484C6N的Datasheet PDF文件第9页浏览型号EP3C55F484C6N的Datasheet PDF文件第10页浏览型号EP3C55F484C6N的Datasheet PDF文件第11页浏览型号EP3C55F484C6N的Datasheet PDF文件第12页  
1–8  
Chapter 1: Cyclone III Device Data Sheet  
Electrical Characteristics  
Table 1–7 lists the OCT calibration accuracy at device power-up.  
Table 1–7. Cyclone III Devices Series OCT with Calibration at Device Power-Up Specifications  
Calibration Accuracy  
Description  
V
CCIO (V)  
Unit  
Industrial and Automotive  
Max  
Commercial Max  
3.0  
2.5  
1.8  
1.5  
1.2  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
%
%
%
%
%
Series OCT with  
calibration at device  
power-up  
The OCT resistance may vary with the variation of temperature and voltage after  
calibration at device power-up. Use Table 1–8 and Equation 1–1 to determine the final  
OCT resistance considering the variations after calibration at device power-up.  
Table 1–8 lists the change percentage of the OCT resistance with voltage and  
temperature.  
Table 1–8. Cyclone III Devices OCT Variation After Calibration at Device Power-Up  
Nominal Voltage  
dR/dT (%/°C)  
0.262  
dR/dV (%/mV)  
–0.026  
3.0  
2.5  
1.8  
1.5  
1.2  
0.234  
–0.039  
0.219  
–0.086  
0.199  
–0.136  
0.161  
–0.288  
Equation 1–1. (Note 1), (2), (3), (4), (5), (6)  
ΔRV = (V – V1) × 1000 × dR/dV ––––– (7)  
2
ΔRT = (T2 – T1) × dR/dT ––––– (8)  
For ΔRx < 0; MFx = 1/ (|ΔRx|/100 + 1) ––––– (9)  
For ΔRx > 0; MFx = ΔRx/100 + 1 ––––– (10)  
MF = MFV × MFT ––––– (11)  
Rfinal = Rinitial × MF ––––– (12)  
Notes to Equation 1–1:  
(1) T2 is the final temperature.  
(2) T1 is the initial temperature.  
(3) MF is multiplication factor.  
(4) Rfinal is final resistance.  
(5) Rinitial is initial resistance.  
(6) Subscript × refers to both V and T.  
(7) ΔRV is variation of resistance with voltage.  
(8) ΔRT is variation of resistance with temperature.  
(9) dR/dT is the change percentage of resistance with temperature after calibration at device power-up.  
(10) dR/dV is the change percentage of resistance with voltage after calibration at device power-up.  
(11) V2 is final voltage.  
(12) V1 is the initial voltage.  
Cyclone III Device Handbook, Volume 2  
© January 2010 Altera Corporation