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EP1S80B1508C7ES 参数 Datasheet PDF下载

EP1S80B1508C7ES图片预览
型号: EP1S80B1508C7ES
PDF下载: 下载PDF文件 查看货源
内容描述: Stratix器件系列数据手册 [Stratix Device Family Data Sheet]
分类和应用:
文件页数/大小: 290 页 / 3583 K
品牌: ALTERA [ ALTERA CORPORATION ]
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DC & Switching Characteristics  
Table 4–102. Reporting Methodology For Minimum Timing For Single-Ended Output Pins (Part 2 of 2)  
Notes (1), (2), (3)  
Measurement  
Loading and Termination  
Point  
I/O Standard  
RUP  
RDN  
RS  
RT  
VCCIO  
(V)  
CL  
VTT  
(V)  
VMEAS  
(pF)  
Ω
Ω
Ω
Ω
3.3-V CTT  
25  
50  
3.600  
1.650  
30  
1.650  
Notes to Table 4–102:  
(1) Input measurement point at internal node is 0.5 × VCCINT  
.
(2) Output measuring point for data is VMEAS. When two values are given, the first is the measurement point on the  
rising edge and the other is for the falling edge.  
(3) Input stimulus edge rate is 0 to VCCINT in 0.5 ns (internal signal) from the driver preceding the I/O buffer.  
(4) The first value is for the output rising edge and the second value is for the output falling edge. The hyphen (-)  
indicates infinite resistance or disconnection.  
Figure 4–8 shows the measurement setup for output disable and output  
enable timing. The TCHZ stands for clock to high Z time delay and is the  
same as TXZ. The TCLZ stands for clock to low Z (driving) time delay and  
is the same as TZX  
.
Figure 4–8. Measurement Setup for TXZ and TZX  
CLK  
CHZ  
T
200mV  
VT=1.5V  
OUT  
OUT  
R
=50  
Ω
200mV  
200mV  
T
CLZ  
C
=10pF  
TOTAL  
200mV  
Altera Corporation  
July 2005  
4–65  
Stratix Device Handbook, Volume 1  
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