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CLK3_1N 参数 Datasheet PDF下载

CLK3_1N图片预览
型号: CLK3_1N
PDF下载: 下载PDF文件 查看货源
内容描述: 的Cyclone III器件手册 [Cyclone III Device Handbook]
分类和应用:
文件页数/大小: 274 页 / 7302 K
品牌: ALTERA [ ALTERA CORPORATION ]
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8–12  
Chapter 8: External Memory Interfaces in the Cyclone III Device Family  
Cyclone III Device Family Memory Interfaces Features  
DDR Output Registers  
A dedicated write DDIO block is implemented in the DDR output and output enable  
paths. Figure 8–5 shows how Cyclone III device family dedicated write DDIO block is  
implemented in the I/O element (IOE) registers.  
Figure 8–5. Cyclone III Device Family Dedicated Write DDIO  
DDR Output Enable Registers  
Output Enable  
IOE  
Register  
Output Enable  
Register AOE  
data1  
data0  
IOE  
Register  
Output Enable  
Register BOE  
DDR Output Registers  
datain_l  
IOE  
Register  
data0  
data1  
DQ or DQS  
Output Register AO  
datain_h  
IOE  
Register  
-90° Shifted Clock  
®
Output Register BO  
The two DDR output registers are located in the I/O element (IOE) block. Two serial  
data streams routed through datain_land datain_h, are fed into two registers,  
outputregister Aoand outputregister Bo, respectively, on the same clock edge.  
The output from outputregisterAois captured on the falling edge of the clock, while  
the output from outputregisterBois captured on the rising edge of the clock. The  
registered outputs are multiplexed by the common clock to drive the DDR output pin  
at twice the data rate.  
The DDR output enable path has a similar structure to the DDR output path in the  
IOE block. The second output enable register provides the write preamble for the DQS  
strobe in DDR external memory interfaces. This active-low output enable register  
extends the high-impedance state of the pin by half a clock cycle to provide the  
external memory’s DQSwrite preamble time specification.  
Cyclone III Device Handbook  
Volume 1  
July 2012 Altera Corporation