Chapter 3: DC and Switching Characteristics for MAX V Devices
Operating Conditions
3–3
Programming/Erasure Specifications
lists the programming/erasure specifications for the MAX V device family.
Table 3–3. Programming/Erasure Specifications for MAX V Devices
Parameter
Erase and reprogram cycles
Note to
(1) This value applies to the commercial grade devices. For the industrial grade devices, the value is 100 cycles.
Block
UFM
Configuration flash memory (CFM)
Minimum
—
—
Typical
—
—
Maximum
1000
100
Unit
Cycles
Cycles
DC Electrical Characteristics
lists DC electrical characteristics for the MAX V device family.
Table 3–4. DC Electrical Characteristics for MAX V Devices
(Part 1 of 2)
Symbol
I
I
I
OZ
Parameter
Tri-stated I/O pin leakage
current
Conditions
Minimum
–10
–10
Typical
—
—
Maximum
10
10
Unit
µA
µA
Input pin leakage current V
I
= V
CCIO
max to 0 V
V
O
= V
CCIO
max to 0 V
5M40Z, 5M80Z, 5M160Z, and
5M240Z (Commercial grade)
5M240Z (Commercial grade)
—
25
90
µA
—
27
96
µA
I
CCSTANDBY
V
CCINT
supply current
(standby)
5M40Z, 5M80Z, 5M160Z, and
5M240Z (Industrial grade)
5M240Z (Industrial grade)
5M570Z (Commercial grade)
5M570Z (Industrial grade)
5M1270Z and 5M2210Z
V
CCIO
= 3.3 V
V
CCIO
= 2.5 V
MAX V devices
V
CCIO
= 3.3 V
—
—
—
—
—
—
—
—
5
10
25
45
80
25
27
27
27
2
400
190
—
—
—
—
—
—
139
152
96
152
—
—
—
40
25
40
60
95
130
µA
µA
µA
µA
mA
mV
mV
mA
k
k
k
k
k
V
SCHMITT
I
CCPOWERUP
Hysteresis for Schmitt
trigger input
V
CCINT
supply current
during power-up
R
PULLUP
Value of I/O pin pull-up
resistor during user
mode and ISP
V
CCIO
= 2.5 V
V
CCIO
= 1.8 V
V
CCIO
= 1.5 V
V
CCIO
= 1.2 V
May 2011
Altera Corporation
ALTERA [ ALTERA CORPORATION ]
