AS7C1025B
®
Write waveform 2 (CE controlled)10,11
t
WC
t
t
AH
AW
t
WR
Address
t
t
CW
AS
CE
t
WP
WE
t
t
t
DH
WZ
DW
D
Data valid
IN
D
OUT
AC test conditions
– Output load: see Figure B.
– Input pulse level: GND to 3.5 V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5 V.
+5 V
Thevenin equivalent:
168
480
Ω
D
OUT
+3.5 V
GND
13
Ω
90%
10%
90%
10%
255
Ω
C
D
+1.728 V
OUT
2 ns
Figure A: Input pulse
GND
Figure B: 5 V Output load
Notes
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions, Figures A and B.
t
CLZ and tCHZ are specified with CL = 5 pF, as in Figure B. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not 100% tested.
WE is high for read cycle.
CE and OE are low for read cycle.
Address is valid prior to or coincident with CE transition low.
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 N/A
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A.
13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF.
3/26/04, v. 1.3
Alliance Semiconductor
P. 6 of 9