AS6VA25616
®
Data retention characteristics (over the operating range)13,5
Parameter
Symbol
Test conditions
Min
1.2V
–
Max
3.3
4
Unit
V
V
for data retention
V
V
CC
= 1.2V
CC
DR
CS ≥ V – 0.1V or
CC
Data retention current
I
mA
ns
CCDR
UB = LB = > V – 0.1V
CC
Chip deselect to data retention time
Operation recovery time
t
0
–
CDR
V
≥ V – 0.1V or
IN
CC
t
V
≤ 0.1V
IN
tRC
–
ns
R
Data retention waveform
Data retention mode
VDR 1.2V
VCC
VCC
VCC
≥
tCDR
tR
VDR
VIH
VIH
CS
AC test loads and waveforms
Thevenin equivalent:
RTH
R1
R1
VCC
VCC
OUTPUT
V
OUTPUT
OUTPUT
30 pF
5 pF
ALL INPUT PULSES
V
CC Typ
R2
R2
90%
10%
90%
10%
INCLUDING
JIG AND
INCLUDING
JIG AND
SCOPE
< 5 ns
(c)
GND
(a)
SCOPE
(b)
Parameters
V
= 3.0V
V
= 2.5V
V
= 2.0V
Unit
CC
CC
CC
R1
R2
1105
16670
15294
Ohms
Ohms
Ohms
Volts
1550
645
15380
8000
1.2V
11300
6500
R
TH
V
1.75V
0.85V
TH
Notes
1
2
3
4
5
6
7
8
9
During VCC power-up, a pull-up resistor to VCC on CS is required to meet ISB specification.
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions.
t
CLZ and tCHZ are specified with CL = 5pF as in Figure C. Transition is measured ±500 mV from steady-state voltage.
This parameter is guaranteed, but not tested.
WE is HIGH for read cycle.
CS and OE are LOW for read cycle.
Address valid prior to or coincident with CS transition LOW.
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/A.
13 1.2V data retention applies to commercial and industrial temperature range operations.
14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.
6
ALLIANCE SEMICONDUCTOR
10/6/00
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
