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AS6VA25616-TI 参数 Datasheet PDF下载

AS6VA25616-TI图片预览
型号: AS6VA25616-TI
PDF下载: 下载PDF文件 查看货源
内容描述: 2.7V至3.3V 256K ×16 Intelliwatt低功耗CMOS SRAM有一个芯片使能 [2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 175 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS6VA25616
®
Write cycle (over the operating range)
11
Parameter
Write cycle time
Chip select to write end
Address setup to write end
Address setup time
Write pulse width
Address hold from end of write
Data valid to write end
Data hold time
Write enable to output in high Z
Output active from write end
UB/LB low to end of write
Shaded areas indicate preliminary information.
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
t
BW
Min
55
40
40
0
35
0
25
0
0
5
35
Max
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
12
12
4, 5
4, 5
4, 5
Write waveform 1 (WE controlled)
10,11
t
WC
Address
t
CW
CS
t
BW
LB, UB
t
AS
WE
t
DW
D
IN
D
OUT
Data undefined
t
WZ
Data valid
t
OW
High Z
t
DH
t
AW
t
WP
t
AH
Write waveform 2 (CS controlled)
10,11
t
WC
Address
t
AS
CS
t
CW
t
AW
t
BW
LB, UB
t
WP
WE
t
DW
D
IN
D
OUT
t
CLZ
High Z
t
WZ
Data undefined
Data valid
t
OW
High Z
t
DH
t
AH
10/6/00
ALLIANCE SEMICONDUCTOR
5