AS6UA5128
Data retention characteristics (over the operating range)
Parameter
Symbol
Test conditions
Min
1.2V
–
Max
3.6
2
Unit
V
V
CC for data retention
VDR
VCC = 1.2V
CS ≥ VCC – 0.1V or
Data retention current
ICCDR
tCDR
tR
mA
ns
V
≥ VCC – 0.1V or
Chip deselect to data retention time
Operation recovery time
0
–
IN
V
≤ 0.1V
IN
tRC
–
ns
Data retention waveform
Data retention mode
1.2V
V
V
V
CC
V
≥
CC
CC
DR
t
t
R
CDR
V
DR
V
V
IH
CS
IH
AC test loads and waveforms
Thevenin equivalent:
R1
R1
V
R
CC
V
TH
CC
V
OUTPUT
OUTPUT
OUTPUT
30 pF
5 pF
ALL INPUT PULSES
V
Typ
R2
CC
R2
90%
10%
90%
10%
INCLUDING
JIG AND
INCLUDING
JIG AND
SCOPE
< 5 ns
(c)
GND
(a)
SCOPE
(b)
Parameters
VCC = 3.0V
1105
VCC = 2.5V
16670
15380
8000
VCC = 2.0V
15294
Unit
R1
R2
Ohms
Ohms
Ohms
Volts
1550
11300
RTH
645
6500
V
1.75V
1.2V
0.85V
TH
Notes
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CS is required to meet I specification.
CC CC SB
This parameter is sampled, but not 100% tested.
For test conditions, see AC Test Conditions.
t
and t are specified with CL = 5pF as in Figure C. Transition is measured ±500 mV from steady-state voltage.
CHZ
CLZ
This parameter is guaranteed, but not tested.
WEis HIGH for read cycle.
CSand OE are LOW for read cycle.
Address valid prior to or coincident with CS transition LOW.
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CS or WE must be HIGH during address transitions. Either CS or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 N/ A.
13 1.2V data retention applies to commercial and industrial temperature range operations.
14 C = 30pF, except at high Z and low Z parameters, where C = 5pF.
6
ALLIANCE SEMICONDUCTOR
7/ 14/ 00
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
