AS6UA5128
Recommended operating condition (over the operating range)
Parameter
Description
Test Conditions
Min
2.4
2.0
1.5
Max
Unit
V
IOH = –2.1mA
OH = –0.5mA
OH = –0.1mA
IOL = 2.1mA
OL = 0.5mA
OL = 0.1mA
VCC = 2.7V
V
Output HIGH Voltage
I
VCC = 2.3V
VCC = 1.65V
VCC = 2.7V
VCC = 2.3V
VCC = 1.65V
VCC = 2.7V
OH
I
0.4
V
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
I
0.4
V
V
V
OL
I
0.2
2.2
2.0
VCC + 0.5
V
V
CC = 2.3V
CC = 1.65V
VCC = 2.7V
CC = 2.3V
CC = 1.65V
GND < VIN < VCC
VCC + 0.3
IH
V
1.4
VCC + 0.3
–0.5
–0.3
–0.3
–1
0.8
V
V
0.6
IL
V
0.4
IIX
Input Load Current
Output Load Current
+1
µA
µA
IOZ
GND < V < VCC; Outputs High Z
–1
+1
O
VCC = 3.6V
2
CS = V ,
IL
VCC Operating Supply
Current
ICC
IOUT = 0mA, f = 0,
IN = V or V
V
CC = 2.7V
CC = 2.3V
VCC = 3.6V
CC = 2.7V
CC = 2.3V
VCC = 3.6V (55/ 70/ 100 ns)
1
mA
mA
mA
µA
V
IL
IH
V
1
2
CS < 0.2V, V < 0.2V,
IN
ICC1
@
Average VCC Operating
1 MHz Supply Current at 1 MHz
or VIN > VCC – 0.2V,
f = 1 mS
V
1
V
1
40/ 30/ 20
30/ 25/ 15
25/ 20/ 12
Average VCC Operating CS ≠ V , VIN = V or
IL
IL
ICC2
V
CC = 2.7V (55/ 70/ 100 ns)
Supply Current
V , f = fMax
IH
V
CC = 2.3V (55/ 70/ 100 ns)
VCC = 3.6V
VCC = 2.7V
CS Power Down Current; CS > V , other inputs
IH
ISB
100
TTL Inputs
= 0V – VCC
V
CC = 2.3V
VCC = 3.6V
CC = 2.7V
CC = 2.3V
CS > VCC – 0.2V >
VCC – 0.2V,
other inputs = 0V –
VCC, f = fMax
20
15
CS Power Down Current;
CMOS Inputs
V
ISB1
µA
µA
V
12
2
CS > VCC – 0.1V,
VCC – 0.1V, f = 0
ISBDR
Data Retention
VCC = 1.2V
Capacitance (f = 1 MHz, T = Room temperature, V = NOMINAL)
a
CC
Signals
Parameter
Symbol
Test conditions
IN = 0V
IN = VOUT = 0V
Max
5
Unit
Input capacitance
C
A, CS, WE, OE
I/ O
V
pF
pF
IN
I/ O capacitance
C
V
7
I/ O
7/ 14/ 00
ALLIANCE SEMICONDUCTOR
3