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AS6UA51216-100BI 参数 Datasheet PDF下载

AS6UA51216-100BI图片预览
型号: AS6UA51216-100BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 512KX16, 100ns, CMOS, PBGA48, FBGA-48]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 9 页 / 205 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS6UA51216-100BI的Datasheet PDF文件第1页浏览型号AS6UA51216-100BI的Datasheet PDF文件第2页浏览型号AS6UA51216-100BI的Datasheet PDF文件第3页浏览型号AS6UA51216-100BI的Datasheet PDF文件第4页浏览型号AS6UA51216-100BI的Datasheet PDF文件第6页浏览型号AS6UA51216-100BI的Datasheet PDF文件第7页浏览型号AS6UA51216-100BI的Datasheet PDF文件第8页浏览型号AS6UA51216-100BI的Datasheet PDF文件第9页  
AS6UA51216  
Write cycle (over the operating range)  
–55  
–70  
–100  
Parameter  
Write cycle time  
Symbol  
tWC  
tCW  
tAW  
Min  
55  
40  
40  
0
Max  
Min  
70  
60  
60  
0
Max  
Min  
100  
80  
80  
0
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
12  
Chip enable to write end  
Address setup to write end  
Address setup time  
tAS  
12  
Write pulse width  
tWP  
tAH  
tDW  
tDH  
35  
0
55  
0
70  
0
Address hold from end of write  
Data valid to write end  
Data hold time  
25  
0
30  
0
40  
0
4, 5  
4, 5  
4, 5  
Write enable to output in high Z  
Output active from write end  
UB/ LB low to end of write  
tWZ  
tOW  
tBW  
0
20  
0
20  
0
20  
5
5
5
35  
55  
70  
Shaded areas indicate preliminary information.  
Write waveform 1 (WE controlled)  
Address  
t
t
WC  
t
AH  
CW  
CS  
t
BW  
LB, UB  
t
AW  
t
t
WP  
AS  
WE  
t
t
DH  
DW  
Data valid  
D
IN  
t
WZ  
t
OW  
D
Data undefined  
OUT  
High Z  
Write waveform 2 (CS controlled)  
t
WC  
Address  
t
t
AS  
AH  
t
CW  
CS  
t
AW  
t
BW  
LB, UB  
WE  
t
WP  
t
t
DH  
DW  
Data valid  
High Z  
D
IN  
t
t
CLZ  
WZ  
t
OW  
D
Data undefined  
OUT  
High Z  
6/ 27/ 00  
ALLIANCE SEMICONDUCTOR  
5