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AS6C8016A 参数 Datasheet PDF下载

AS6C8016A图片预览
型号: AS6C8016A
PDF下载: 下载PDF文件 查看货源
内容描述: [Process Technology]
分类和应用:
文件页数/大小: 12 页 / 469 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AUGUST 2010  
AS6C8016A  
512K X 16 BIT LOW POWER CMOS SRAM  
,
S
          V
F
i
TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB Controlled)  
t
WC  
Address  
CS  
t
(2)  
t
(4)  
CW  
WR  
t
AW  
t
BW  
UB,LB  
WE  
t
(1)  
t
(3)  
WP  
AS  
t
DH  
t
DW  
Data in  
Data Valid  
High-Z  
High-Z  
Data out  
NOTES (WRITE CYCLE)  
1. A write occurs during the overlap(tWP) of low CS and low WE. A write begins when CS goes low and WE goes low with asserting  
UB or LB for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest  
transition when CS goes high and WE goes high. The tWP is measured from the beginning of write to the end of write.  
2. tCW is measured from the CS going low to end of write.  
3. tAS is measured from the address valid to the beginning of write.  
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS or WE going high.  
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