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AS6C62256 参数 Datasheet PDF下载

AS6C62256图片预览
型号: AS6C62256
PDF下载: 下载PDF文件 查看货源
内容描述: 32K ×8位低功耗CMOS SRAM [32K X 8 BIT LOW POWER CMOS SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 2306 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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February 2007  
AS6C62256  
®
32K X 8 BIT LOW POWER CMOS SRAM  
PIN CONFIGURATION  
A14  
A12  
A7  
1
2
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
Vcc  
WE#  
A13  
A8  
3
OE#  
A11  
A9  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
A10  
CE#  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
Vss  
DQ2  
DQ1  
DQ0  
A0  
A6  
4
A5  
5
A9  
A8  
A4  
6
A11  
OE#  
A10  
CE#  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
A13  
WE#  
Vcc  
A14  
A12  
A7  
A6  
A5  
A4  
A3  
A3  
7
AS6C62256  
A2  
8
A1  
9
A0  
10  
11  
12  
13  
14  
A1  
A2  
DQ0  
DQ1  
DQ2  
Vss  
sTSOP  
PDIP/SOP  
ABSOLUTE MAXIMUM RATINGS*  
PARAMETER  
SYMBOL  
RATING  
-0.5 to 7.0  
UNIT  
V
Terminal Voltage with Respect to VSS  
VTERM  
0 to 70(C grade)  
ºC  
Operating Temperature  
TA  
ºC  
-40 to 85(I grade)  
Storage Temperature  
TSTG  
PD  
-65 to 150  
Power Dissipation  
1
W
mA  
ºC  
DC Output Current  
IOUT  
50  
Soldering Temperature (under 10 sec)  
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress  
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.  
TSOLDER  
260  
TRUTH TABLE  
CE#  
H
OE#  
X
WE#  
X
SUPPLY CURRENT  
ISB,ISB1  
MODE  
I/O OPERATION  
Standby  
High-Z  
L
L
L
H
L
H
H
L
Output Disable  
Read  
High-Z  
DOUT  
DIN  
ICC,ICC1  
ICC,ICC1  
X
Write  
ICC,ICC1  
Note: H = VIH, L = VIL, X = Don't care.  
02/FEB/07, v1.0  
Alliance Memory Inc.  
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