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AS6C4008-55PCN 参数 Datasheet PDF下载

AS6C4008-55PCN图片预览
型号: AS6C4008-55PCN
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×8位低功耗512K ×8位低功耗CMOS SRAM [512K X 8 BIT LOW POWER 512K X 8 BIT LOW POWER CMOS SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 15 页 / 2758 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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OCTOBER 2007
®
AS6C4008
512K X 8 BIT LOW POWER CMOS SRAM
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Terminal Voltage with Respect to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 sec)
SYMBOL
V
TERM
T
A
T
STG
P
D
I
OUT
T
SOLDER
-40 to 85(I grade)
-65 to 150
1
50
260
RATING
-0.5 to 6.5
0 to 70(C grade)
UNIT
V
ºC
ºC
W
mA
ºC
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
Standby
Output Disable
Read
Write
Note:
MODE
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
D
OUT
D
IN
SUPPLY CURRENT
I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*1
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
V
IN
V
SS
Output Leakage
V
CC
V
OUT
V
SS
,
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
- 55
I
CC
CE# = 0.2V, I
I/O
= 0mA
other pins at 0.2V or V
CC
- 0.2V
Average Operating
Power supply Current
Cycle time = 1µs
I
CC1
CE# = 0.2V, I
I/O
= 0mA
other pins at 0.2V or V
CC
- 0.2V
*C
Standby Power
I
SB1
CE#
V
CC
- 0.2V
Supply Current
*I
Notes:
MIN.
TYP.
2.7
3.0
0.7* V
CC
-
- 0.2
-
-1
-
-1
2.4
-
-
-
-
-
30
*3
MAX.
5.5
V
CC
+0.3
0.6
1
1
-
0.4
60
UNIT
V
V
V
µA
µA
V
V
mA
-
-
-
4
4
4
10
50
*4
50
*4
mA
µA
µA
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
2. Over/Undershoot specifications are characterized, not 100% tested.
3. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25ºC
4. 25µA for special request
*C=Commercial temperature/I = Industrial temperature
10/OCTOBER/07, V.1.1
Alliance Memory Inc.
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