OCTOBER 2007
AS6C4008
®
512K X 8 BIT LOW POWER CMOS SRAM
DATA RETENTION CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITION
MIN.
TYP.
MAX.
UNIT
VCC for Data Retention
VDR CE# ≧ VCC - 0.2V
2.0
-
5.5
V
**C
**I
V
CC = 2.0V
-
-
2
2
30
30
µ
A
µ
IDR
Data Retention Current
CE# ≧ VCC - 0.2V
Chip Disable to Data
Retention Time
See Data Retention
Waveforms (below)
tCDR
tR
0
-
-
-
-
ns
ns
Recovery Time
tRC
*
tRC = Read Cycle Time **C=Commercial temperature/I=Industrial temperature
*
DATA RETENTION WAVEFORM
VDR ≧ 2.0V
Vcc(min.)
Vcc
Vcc(min.)
tCDR
tR
VIH
CE# ≧ Vcc-0.2V
VIH
CE#
10/OCTOBER/07, V.1.1
Alliance Memory Inc.
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