AS6C3216
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
Rev. 1.0
TRUTH TABLE
I/O OPERATION
SUPPLY
CURRENT
MODE CE# CE2 BYTE# OE# WE# LB#
UB#
DQ0-DQ7 DQ8-DQ14 DQ15
H
X
X
L
L
L
L
L
L
L
L
L
X
X
H
H
H
L
H
H
H
H
H
H
X
X
X
H
H
H
L
L
L
X
X
X
X
X
X
H
H
H
H
H
H
L
X
X
H
L
X
X
L
H
L
L
X
X
H
X
L
X
H
L
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
DOUT
High – Z
DOUT
DIN
High – Z
DIN
High – Z High – Z
High – Z High – Z
High – Z High – Z
High – Z High – Z
High – Z High – Z
High – Z High – Z
High – Z High – Z
X
L
Standby
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
X
H
H
H
H
H
H
H
H
H
Output
Disable
Read
Write
DOUT
DOUT
DOUT
DOUT
L
H
L
High – Z High – Z
L
L
H
L
DIN
DIN
DIN
DIN
L
Byte#
Read
Byte #
Write
L
L
L
H
L
Dout
Din
High – Z
High – Z
A-1
A-1
ICC,ICC1
ICC,ICC1
H
X
X
X
X
L
L
X
H
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
2.7
2.2
- 0.2
- 1
TYP. *4 MAX.
UNIT
PARAMETER
Supply Voltage
VCC
3.0
3.6
VCC+0.3
0.6
V
V
V
*1
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage
Current
VIH
-
-
-
*2
VIL
ILI
VCC ≧ VIN ≧ VSS
1
A
µ
VCC ≧ VOUT ≧ VSS
Output Disabled
ILO
- 1
-
1
A
µ
Output High Voltage
Output Low Voltage
VOH IOH = -1mA
2.2
-
2.7
-
-
V
V
VOL
IOL = 2mA
0.4
Cycle time = Min.
CE# = VIL and CE2 = VIH
II/O = 0mA
45
10
80
20
ICC
- 55
-
-
mA
Other pins at VIL or VIH
Average Operating
Power supply Current
Cycle time = 1 s
µ
≦
≧
CE# 0.2V and CE2 VCC-0.2V
ICC1
mA
mA
II/O = 0mA
Other pins at 0.2V or VCC-0.2V
CE# = VIH or CE2 = VIL
Other pins at VIL or VIH
CE# ≧VCC-0.2V
ISB
-
-
0.3
10
2
Standby Power
Supply Current
ISB1
≦
-SLI
120
A
µ
or CE2 0.2V
Other pins at 0.2V or VCC-0.2V
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
℃
Typical values are measured at VCC = VCC(TYP.) and TA = 25
Alliance Memory, Inc.
4