February 2007
®
AS6C1008
128K X 8 BIT LOW POWER CMOS SRAM
FEATURES
Access time :55ns
Low powe r consumption:
Operating current:10 mA (TYP.)
Standby current: 1 µA (TYP
.)
Single 2.7V ~ 5.5V po we r supply
Fully Compatible with all Competitors 5V product
Fully Compatible with all Competitors 3.3V product
Fully s tatic operation
Tri-state output
Data retention voltage : 1.5V (MIN.)
All products are ROHS Compliant
Package : 32-pin 450 mil SOP
32-pin 600 mil P-DIP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm sTSOP
36-ball 6mm x 8mm TFBGA
GENERAL DESCRIPTION
The AS6C1008 is a 1,048,576 -bit low powe r
CMOS static random access me mory organized as
131,072 words by 8 bits . It is fabricated using ve ry
high performance, high reliability CMOS technolo gy. Its
sta ndby current is stable within the ra nge of
operating temperature.
The AS6C1008 is well designed for very low power
system applications, a nd particula rly well suited for
battery back-u p non-volatile memory a pplication.
The AS6C1008 operates from a single power supply
of 2.7V ~ 5.5V.
.
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
SYMBOL
DESCRIPTION
Addres s Inputs
Da ta Inputs /Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Pow er
Supply
G round
No C onnection
A0 - A16
DQ0 – DQ7
CE#, CE2
WE#
OE#
V
CC
V
SS
NC
Vcc
Vss
A0-A16
DECODER
128Kx8
MEMORY ARRAY
DQ0-DQ7
I/O DATA
CIRCUIT
COLUMN I/O
CE#
CE2
WE#
OE#
CONTROL
CIRCUIT
02/February/07, v 1.0
Alliance Memory Inc.
Page 1 of 14
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
