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AS5LC2M16-85BE 参数 Datasheet PDF下载

AS5LC2M16-85BE图片预览
型号: AS5LC2M16-85BE
PDF下载: 下载PDF文件 查看货源
内容描述: [Pseudo Static RAM, 2MX16, 85ns, CMOS, PBGA48, 6 X 8 MM, FBGA-48]
分类和应用: 内存集成电路
文件页数/大小: 10 页 / 174 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS5LC2M16  
&
AC test loads and waveforms  
Thevenin equivalent:  
R1  
R1  
V
R
CC  
V
TH  
CC  
V
OUTPUT  
TH  
OUTPUT  
OUTPUT  
30 pF  
5 pF  
ALL INPUT PULSES  
90%  
V
Typ  
R2  
CC  
R2  
90%  
10%  
10%  
INCLUDING  
JIG AND  
INCLUDING  
JIG AND  
SCOPE  
< 5 ns  
GND  
(a)  
SCOPE  
(b)  
(c)  
Parameters  
VCC = 2.7V  
Unit  
Ohms  
Ohms  
Ohms  
Volts  
R1  
R2  
992  
1842  
645  
RTH  
VTH  
1.755V  
Notes  
1
2
3
4
5
6
7
8
9
During V power-up, a pull-up resistor to V on CS1 is required to meet I specification.  
CC CC SB  
This parameter is sampled, but not 100% tested.  
For test conditions, see AC Test Conditions.  
t
and t are specified with C = 5pF as in Figure C. Transition is measured 500 mV from steady-state voltage.  
CHZ L  
CLZ  
This parameter is guaranteed, but not tested.  
WE is HIGH for read cycle.  
CS1 and OE are LOW for read cycle.  
Address valid prior to or coincident with CS1 transition LOW.  
All read cycle timings are referenced from the last valid address to the first transitioning address.  
10 CS1 or WE must be HIGH during address transitions. Either CS1 or WE asserting high terminates a write cycle.  
11 All write cycle timings are referenced from the last valid address to the first transitioning address.  
12 N/A.  
13 C = 30pF, except at high Z and low Z parameters, where C = 5pF.  
14 Memory cell data hold invalid.  
2/15/02; V.0.9.6  
Alliance Semiconductor  
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