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AS4LC4M4F1-60JC 参数 Datasheet PDF下载

AS4LC4M4F1-60JC图片预览
型号: AS4LC4M4F1-60JC
PDF下载: 下载PDF文件 查看货源
内容描述: 4M × 4 CMOS DRAM(快速页面), 3.3V系列 [4M×4 CMOS DRAM (Fast Page) 3.3V Family]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 14 页 / 269 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC4M4F1  
®
Absolute maximum ratings  
Parameter  
Symbol  
Vin  
Min  
Max  
Unit  
V
Input voltage  
-1.0  
-1.0  
-1.0  
-55  
4.6  
4.6  
4.6  
150  
Input voltage (DQs)  
VDQ  
VCC  
V
Power supply voltage  
Storage temperature (plastic)  
Soldering temperature × time  
Power dissipation  
V
TSTG  
TSOLDER  
PD  
°C  
oC × sec  
260 × 10  
0.432  
50  
W
Short circuit output current  
Iout  
mA  
DC electrical characteristics  
-50  
-60  
Parameter  
Symbol Test conditions  
Min Max Min Max Unit Notes  
0V Vin +Vcc(max)  
Input leakage current  
IIL  
-5  
+5  
+5  
-5  
-5  
+5  
+5  
µA  
µA  
Pins not under test = 0V  
Output leakage current IOL  
DOUT disabled, 0V Vout + Vcc(max) -5  
Operating power  
ICC1  
CAS, Address cycling; tRC=min  
RAS = CAS VIH  
120  
110  
mA  
1,2  
supply current  
TTL standby power  
ICC2  
2.0  
2.0  
mA  
mA  
supply current  
Average power supply  
current, RAS refresh  
mode or CBR  
RAS cycling, CAS VIH,  
ICC3  
120  
110  
1
t
RC = min of RAS low after CAS low.  
Fast page mode average  
power supply current  
RAS = VIL, CAS,  
address cycling: tHPC = min  
ICC4  
ICC5  
90  
80  
mA  
mA  
1, 2  
CMOS standby power  
supply current  
RAS = CAS = VCC - 0.2V  
2.0  
2.0  
VOH  
VOL  
IOUT = -2.0 mA  
IOUT = 2.0 mA  
2.4  
2.4  
V
V
Output voltage  
0.4  
0.4  
CAS before RAS refresh  
current  
ICC6  
RAS, CAS cycling, tRC = min  
120  
110  
mA  
RAS = CAS 0.2v,  
Self refresh current  
ICC7  
WE - OE VCC - 0.2V,  
-
0.6  
-
0.6  
mA  
all other inputs at 0.2V or VCC - 0.2V  
5/16/01; v.1.0 Restored  
Alliance Semiconductor  
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