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AS4LC256K16E0-45JC 参数 Datasheet PDF下载

AS4LC256K16E0-45JC图片预览
型号: AS4LC256K16E0-45JC
PDF下载: 下载PDF文件 查看货源
内容描述: 3.3V 256K ×16的CMOS DRAM( EDO ) [3.3V 256K X 16 CMOS DRAM (EDO)]
分类和应用: 动态存储器
文件页数/大小: 25 页 / 526 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4LC256K16EO
®
AC parameters common to all waveforms
-35
Std Symbol Parameter
t
RC
t
RP
t
RAS
t
CAS
t
RCD
t
RAD
t
RSH(R)
t
CSH
t
CRP
t
ASR
t
RAH
t
T
t
REF
t
CLZ
Random read or write cycle time
RAS precharge time
RAS pulse width
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS hold time (read cycle)
RAS to CAS hold time
CAS to RAS precharge time
Row address setup time
Row address hold time
Transition time (rise and fall)
Refresh period
CAS to output in low Z
Min
50
15
35
6
12
8
10
35
5
0
6
1.5
0
Max
75K
18
14
50
8
Min
80
20
45
10
18
13
10
45
5
0
8
1.5
3
-45
Max
75K
32
23
50
8
Min
100
20
60
10
15
15
12
60
5
0
9
1.5
3
-60
Max Unit
75K
45
30
50
8
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
4,5
3
8
6
7
Notes
Read cycle
-35
Std Symbol
t
RAC
t
CAC
t
AA
t
AR(R)
t
RCS
t
RCH
tRRH
-45
Max
35
7
17
8
Min
35
0
0
0
25
5
0
Max
45
10
22
10
Min
40
0
0
0
30
5
0
-60
Max
60
10
30
10
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8,10
9
9
Notes
6
6,13
7,13
Parameter
Access time from RAS
Access time from CAS
Access time from address
Column add hold from RAS
Read command setup time
Read command hold time to CAS
Read command hold time to RAS
Column address to RAS Lead time
CAS precharge time
Output buffer turn-off time
Min
28
0
0
0
18
4
0
t
RAL
t
CPN
t
OFF
4/11/01; V.1.1
Alliance Semiconductor
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