AS4C4M4EOQ
AS4C4M4E1Q
®
Absolute maximum ratings
Parameter
Symbol
Vin
Min
-1.0
-1.0
-1.0
-55
–
Max
Unit
Input voltage
+7.0
VCC + 0.5
+7.0
+150
260 × 10
1
V
Input voltage (DQs)
VDQ
V
Power supply voltage
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
VCC
V
TSTG
°C
oC × sec
TSOLDER
PD
–
W
Short circuit output current
Iout
–
50
mA
DC electrical characteristics (AS4C4M4E0/E1)
-50
-60
Parameter
Symbol Test conditions
Min
Max
+5
Min
-5
-5
–
Max
Unit
µA
Notes
1,2
0V ≤ Vin ≤ +5.5V,
Pins not under test = 0V
Input leakage current IIL
Output leakage current IOL
-5
-5
–
+5
+5
DOUT disabled, 0V ≤ Vout ≤ +5.5V
+5
µA
Operating power
ICC1
RAS, UCAS, LCAS, Address cycling;
tRC=min
110
100
mA
supply current
TTL standby power
ICC2
RAS = UCAS = LCAS ≥ VIH
–
–
2.0
–
–
2.0
mA
mA
supply current
Average power supply
current, RAS refresh ICC3
mode or CBR
RAS cycling, UCAS = LCAS ≥ VIH,
t
RC = min of RAS low after XCAS
110
100
1
low.
EDO page mode
average power supply ICC4
current
RAS = VIL, UCAS or LCAS,
address cycling: tHPC = min
–
–
90
–
–
80
mA
mA
1, 2
CMOS standby power
ICC5
RAS = UCAS = LCAS = VCC - 0.2V
1.0
1.0
supply current
VOH
Output voltage
VOL
IOUT = -5.0 mA
IOUT = 4.2 mA
2.4
–
–
2.4
–
–
V
V
0.4
0.4
CAS before RAS refresh
current
RAS, UCAS or LCAS cycling, tRC
min
=
ICC6
–
110
0.6
–
100
0.6
mA
RAS = UCAS = LCAS ≤ 0.2V,
WE = OE ≥ VCC - 0.2V,
all other inputs at 0.2V or
Self refresh current
ICC7
–
–
mA
V
CC - 0.2V
3/22/01; v.1.0
Alliance Semiconductor
P. 4 of 16
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
