128M DDR1 -AS4C8M16D1
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I/O Pins Voltage
VIN, VOUT
VIN
- 0.5~VDDQ + 0.5
- 1~3.6
V
V
V
VREF and Inputs Voltage
Power Supply Voltage
VDD, VDDQ
- 1~3.6
Commercial
Industrial
C
0~70
!
!
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Ambient Temperature
TA
C
C
-40~85
- 55~150
1
Storage Temperature
Power Dissipation
TSTG
PD
W
Short Circuit Output Current
IOS
50
mA
Note1: Stress greater than those listed under ÒAbsolute Maximum RatingsÓ may cause permanent damage of
the devices
Note2: These voltages are relative to Vss
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Power Supply Voltage
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2.3
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Power Supply Voltage (for I/O Buffer)
Input Reference Voltage
Termination Voltage
VDDQ
2.3
2.7
V
VREF
0.49 * VDDQ
0.51 * VDDQ
V
VTT
V
- 0.04
+ 0.15
V
+ 0.04
REF
V
REF
Input High Voltage (DC)
Input Low Voltage (DC)
VIH (DC)
VIL (DC)
VIN (DC)
V
V
+ 0.3
- 0.15
+ 0.3
V
REF
DDQ
-0.3
V
V
REF
-0.3
-2
V
V
DDQ
CK
Input Voltage Level, CK and
inputs
Input Leakage current, Any input 0V " VIN " VDD
II
2
µA
(All other pins not under test = 0 V)
Output Leakage current
IOZ
IOH
IOL
-5
5
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µA
mA
mA
Output High Current (VOUT = 1.95V)
Output Low Current (VOUT = 0.35V)
-16.2
16.2
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CK
CIN1
2
3
pF
Input Capacitance (CK,
)
Input Capacitance (All other input-only pins)
DQ, DQS, DM Input/Output Capacitance
CIN2
CI/O
2
4
3
5
pF
pF
Note: These parameters are guaranteed by design, periodically sampled and are not 100% tested
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ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
