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AS4C64M8D2-25BCN 参数 Datasheet PDF下载

AS4C64M8D2-25BCN图片预览
型号: AS4C64M8D2-25BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Fully synchronous operation]
分类和应用:
文件页数/大小: 59 页 / 1530 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C64M8D2  
Figure 26. Burst write followed by burst read:  
RL=5 (AL=2, CL=3, WL=4, tWTR=2, BL=4)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
CK#  
CK  
Write to Read = CL-1+BL/2+tWTR  
NOP NOP NOP  
Post CAS#  
READ A  
NOP  
NOP  
NOP  
NOP  
NOP  
CKE  
DQS#  
DQS  
DQS  
DQS#  
WL = RL-1 = 4  
AL=2  
CL=3  
RL=5  
>=tWTR  
DQ  
DOUT A0  
DNA0 DNA1 DNA2 DNA3  
NOTE : The minimum number of clock from the burst write command to the burst read command is [CL-1 + BL/2 + tWTR].  
This tWTR is not a write recovery time (tWR) but the time required to transfer the 4 bit write data from the input buffer into  
sense amplifiers in the array. tWTR is defined in the timing parameter table of this standard.  
Figure 27. Seamless burst write operation RL=5, WL=4, BL=4  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CK#  
CK  
Post CAS#  
Write A  
Post CAS#  
Write B  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
CMD  
DQS#  
DQS  
DQS  
DQS#  
WL = RL-1 = 4  
DQ  
DNA0 DNA1 DNA2 DNA3 DNB0 DNB1 DNB2 DNB3  
NOTE : The seamless burst write operation is supported by enabling a write command every other clock for  
BL= 4 operation, every four clocks for BL = 8 operation. This operation is allowed regardless of same or  
different banks as long as the banks are activated.  
Confidential  
42  
Rev. 1.0  
Feb. /2014  
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