AS4C64M8D2
Table 25. Electrical Characteristics and Recommended A.C. Operating Conditions
(VDD = 1.8V 0.1V, TOPER = 0~95C)
-25
-3
Specific
Notes
Symbol
Parameter
Unit
Min.
Max.
Min.
Max.
CL=3
5
8
8
5
3.75
3
8
8
8
15, 33, 34
15, 33, 34
15, 33, 34
15, 33, 34
34, 35
ns
ns
ns
ns
tCK
tCK
tCK
CL=4
CL=5
CL=6
3.75
2.5
Average clock period
tCK(avg)
8
2.5
8
-
-
Average clock HIGH pulse width
0.48
0.48
0.52
0.52
0.48
0.48
0.52
tCH(avg)
tCL(avg)
WL
Average Clock LOW pulse width
0.52
34, 35
Write command to DQS associated clock edge
RL-1
RL-1
DQS latching rising transitions to associated clock
edges
-0.25
0.25
-0.25
0.25
28
28
tDQSS
tCK
DQS falling edge to CK setup time
DQS falling edge hold time from CK
0.2
0.2
-
-
0.2
0.2
-
tDSS
tDSH
tCK
tCK
-
DQS input HIGH pulse width
0.35
-
0.35
-
tDQSH
tCK
DQS input LOW pulse width
Write preamble
0.35
0.35
0.4
-
-
0.35
0.35
0.4
-
-
tDQSL
tWPRE
tWPST
tCK
tCK
tCK
Write postamble
0.6
0.6
10
5, 7, 9, 22,
27
Address and Control input setup time
0.175
-
0.2
-
tIS(base)
ns
5, 7, 9, 23,
27
Address and Control input hold time
Control & Address input pulse width for each input
DQ & DM input setup time
0.25
0.6
-
-
-
0.275
0.6
-
-
-
tIH(base)
tIPW
ns
tCK
ns
6, 7, 8, 20,
26, 29
0.05
0.1
tDS(base)
6, 7, 8, 21,
26, 29
DQ & DM input hold time
0.125
-
0.175
-
tDH(base)
ns
DQ and DM input pulse width for each input
DQ output access time from CK, CK#
DQS output access time from CK, CK#
Data-out high-impedance time from CK, CK#
DQS(DQS#) low-impedance time from CK, CK#
DQ low-impedance time from CK, CK#
DQS-DQ skew for DQS and associated DQ signals
CK half pulse width
0.35
-
0.35
-0.45
-0.4
-
-
tDIPW
tAC
tDQSCK
tHZ
tLZ(DQS)
tLZ(DQ)
tDQSQ
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
tCK
tCK
ns
tCK
ns
ns
ns
ns
tCK
ns
tCK
tCK
-0.4
0.4
0.35
0.45
0.4
38
38
-0.35
-
18, 38
18, 38
18, 38
13
tAC(max)
tAC(max)
tAC(min)
tAC(max)
tAC(min)
tAC(max)
2tAC(min)
2tAC(min)
tAC(max)
0.2
tAC(max)
-
-
0.24
min(tCL,tCH
)
-
min(tCL,tCH
)
11, 12, 35
12, 36
37
tHP
tQHS
-
DQ hold skew factor
-
tHP -tQHS
0.9
0.3
-
0.34
DQ/DQS output hold time from DQS
Read preamble
-
-
0.9
tHP -tQHS
tQH
1.1
1.1
19, 39
19, 40
4, 30
tRPRE
tRPST
tRRD
tCCD
tWR
Read postamble
0.4
0.6
0.4
0.6
Active to active command period
CAS# to CAS# command delay
10
-
-
-
-
-
-
-
-
10
-
-
-
-
-
2
2
Write recovery time
15
15
30
14, 31
3, 24, 30
3, 30
25
Auto Power write recovery + precharge time
Internal Write to Read Command Delay
Internal read to precharge command delay
CKE minimum pulse width
WR + tRP
7.5
WR + tRP
7.5
tDAL
tWTR
tRTP
tCKE
tXSNR
tXSRD
tXP
7.5
7.5
3
tRFC+10
200
2
-
-
-
3
Exit self refresh to non-read command delay
Exit self refresh to a read command
Exit precharge power down to any command
30
t
RFC+10
200
2
-
-
-
-
Confidential
24
Rev. 1.0
Feb. /2014
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
