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AS4C4M4F1-60TI 参数 Datasheet PDF下载

AS4C4M4F1-60TI图片预览
型号: AS4C4M4F1-60TI
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 4M × 4 CMOS DRAM(快页模式) [5V 4M×4 CMOS DRAM (Fast Page mode)]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 18 页 / 271 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C4M4F0  
AS4C4M4F1  
®
Absolute maximum ratings  
Parameter  
Symbol  
Vin  
Min  
-1.0  
-1.0  
-1.0  
-55  
Max  
Unit  
Input voltage  
+7.0  
VCC + 0.5  
+7.0  
+150  
260 × 10  
1
V
Input voltage (DQs)  
VDQ  
V
Power supply voltage  
Storage temperature (plastic)  
Soldering temperature × time  
Power dissipation  
VCC  
V
TSTG  
TSOLDER  
PD  
°C  
oC × sec  
W
Short circuit output current  
Iout  
50  
mA  
DC electrical characteristics  
-50  
-60  
Parameter  
Symbol Test conditions  
0V Vin +5.5V,  
Pins not under test = 0V  
Min Max Min Max Unit Notes  
Input leakage current  
IIL  
-5  
-5  
+5  
+5  
-5  
-5  
+5  
+5  
µA  
µA  
Output leakage current IOL  
DOUT disabled, 0V Vout +5.5V  
Operating power  
ICC1  
RAS, CAS Address cycling; tRC=min  
135  
120  
mA  
1,2  
supply current  
TTL standby power  
ICC2  
RAS = CAS VIH  
2.0  
2.0  
mA  
mA  
supply current  
Average power supply  
RAS cycling, CAS VIH,  
current, RAS refresh  
mode or CBR  
ICC3  
120  
110  
1
tRC = min of RAS low after XCAS low.  
Fast page mode average  
power supply current  
RAS = VIL, CAS,  
address cycling: tHPC = min  
ICC4  
ICC5  
130  
1.0  
120  
1.0  
mA  
mA  
1, 2  
CMOS standby power  
supply current  
RAS = CAS = VCC - 0.2V  
VOH  
VOL  
IOUT = -5.0 mA  
IOUT = 4.2 mA  
2.4  
2.4  
V
V
Output voltage  
0.4  
0.4  
CAS before RAS refresh  
current  
ICC6  
RAS, CAS cycling, tRC = min  
120  
0.6  
110  
0.6  
mA  
RAS = UCAS = LCAS 0.2V,  
WE = OE VCC - 0.2V,  
all other inputs at 0.2V or  
Self refresh current  
ICC7  
mA  
VCC - 0.2V  
4/11/01; v.0.9  
Alliance Semiconductor  
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