AS4C4M4F0
AS4C4M4F1
®
Write cycle
-50
-60
Symbol Parameter
Min
0
Max
–
Min
0
Max
–
Unit
Notes
11
tWCS
tWCH
tWP
Write command setup time
ns
ns
ns
ns
ns
ns
ns
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
10
10
10
8
–
10
10
10
10
0
–
11
–
–
tRWL
tCWL
tDS
–
–
–
–
0
–
–
12
12
tDH
Data-in hold time
8
–
10
–
Read-modify-write cycle
-50
-60
Symbol Parameter
Min
113
67
Max
–
Min
135
77
Max
–
Unit
ns
Notes
tRWC
tRWD
tCWD
tAWD
Read-write cycle time
RAS to WE delay time
–
–
ns
11
11
11
CAS to WE delay time
32
–
35
–
ns
Column address to WE delay time
42
–
47
–
ns
Refresh cycle
-50
-60
Symbol
tCSR
Parameter
Min
5
Max
–
Min
5
Max
–
Unit
ns
Notes
CAS setup time (CAS-before-RAS)
CAS hold time (CAS-before-RAS)
RAS precharge to CAS hold time
3
3
tCHR
8
–
10
0
–
ns
tRPC
0
–
–
ns
CAS precharge time
(CBR counter test)
tCPT
10
10
–
ns
4/11/01; v.0.9
Alliance Semiconductor
P. 6 of 18
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
