AS4C4M4EOQ
AS4C4M4E1Q
®
Absolute maximum ratings
Parameter
Input voltage
Input voltage (DQs)
Power supply voltage
Storage temperature (plastic)
Soldering temperature × time
Power dissipation
Short circuit output current
Symbol
V
in
V
DQ
V
CC
T
STG
T
SOLDER
P
D
I
out
Min
-1.0
-1.0
-1.0
-55
–
–
–
Max
+7.0
V
CC
+ 0.5
+7.0
+150
260 × 10
1
50
Unit
V
V
V
°C
o
C × sec
W
mA
DC electrical characteristics (AS4C4M4E0/E1)
-50
Parameter
Symbol Test conditions
0V
≤
V
in
≤
+5.5V,
Pins not under test = 0V
D
OUT
disabled, 0V
≤
V
out
≤
+5.5V
RAS, UCAS, LCAS, Address cycling;
t
RC
=min
RAS = UCAS = LCAS
≥
V
IH
RAS cycling, UCAS = LCAS
≥
V
IH
,
t
RC
= min of RAS low after XCAS
low.
RAS = V
IL
, UCAS or LCAS,
address cycling: t
HPC
= min
RAS = UCAS = LCAS = V
CC
- 0.2V
I
OUT
= -5.0 mA
I
OUT
= 4.2 mA
RAS, UCAS or LCAS cycling, t
RC
=
min
RAS = UCAS = LCAS
≤
0.2V,
WE = OE
≥
V
CC
- 0.2V,
all other inputs at 0.2V or
V
CC
- 0.2V
Min
-5
-5
–
–
Max
+5
+5
110
2.0
Min
-5
-5
–
–
-60
Max
+5
+5
100
2.0
Unit
µA
µA
mA
mA
1,2
Notes
Input leakage current I
IL
Output leakage current I
OL
Operating power
supply current
TTL standby power
supply current
I
CC1
I
CC2
Average power supply
current, RAS refresh I
CC3
mode or CBR
EDO page mode
average power supply I
CC4
current
CMOS standby power
I
CC5
supply current
Output voltage
V
OH
V
OL
–
110
–
100
mA
1
–
90
–
80
mA
1, 2
–
2.4
–
–
1.0
–
0.4
110
–
2.4
–
–
1.0
–
0.4
100
mA
V
V
mA
CAS before RAS refresh
I
CC6
current
Self refresh current
I
CC7
–
0.6
–
0.6
mA
3/22/01; v.1.0
Alliance Semiconductor
P. 4 of 16
ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
