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AS4C256M16D3-12BCN 参数 Datasheet PDF下载

AS4C256M16D3-12BCN图片预览
型号: AS4C256M16D3-12BCN
PDF下载: 下载PDF文件 查看货源
内容描述: [Bidirectional differential data strobe]
分类和应用: 动态存储器双倍数据速率内存集成电路
文件页数/大小: 83 页 / 2083 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
 浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第73页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第74页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第75页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第76页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第78页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第79页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第80页浏览型号AS4C256M16D3-12BCN的Datasheet PDF文件第81页  
AS4C256M16D3  
Figure 65. Synchronous ODT Timing Example  
(AL = 3; CWL = 5; ODTLon = AL + CWL - 2 = 6; ODTLoff = AL + CWL - 2 = 6)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
T15  
CK#  
CK  
CKE  
ODT  
AL = 3  
AL = 3  
CWL - 2  
ODTH4, min  
ODTLoff = CWL + AL - 2  
ODTLon = CWL + AL - 2  
tAOF  
tAON  
(min)  
(min)  
DRAM_RTT  
RTT_NOM  
tAON  
tAOF  
(max)  
(max)  
TRANSITIONING DATA  
Don't Care  
Figure 66. Synchronous ODT example with BL = 4, WL = 7  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
T17  
CK#  
CK  
CKE  
ODTH4min  
NOP  
ODTH4  
NOP  
ODTH4  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
WRS4  
NOP  
NOP  
COMMAND  
ODT  
ODTLoff = WL - 2  
ODTLon = WL - 2  
ODTLoff = WL - 2  
ODTLon = WL - 2  
tAOF  
tAON  
tAOF  
(min)  
(min)  
(min)  
tAON  
(max)  
(min)  
RTT_NOM  
DRAM_RTT  
tAON  
tAON  
(max)  
tAOF  
tAOF  
(max)  
(max)  
TRANSITIONING DATA  
Don't Care  
Figure 67. Dynamic ODT Behavior with ODT being asserted before and after the write  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
T9  
T10  
T11  
T12  
T13  
T14  
T15  
T16  
T17  
CK#  
CK  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
WRS4  
VALID  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
ADDRESS  
ODTH4  
ODTLoff  
ODTH4  
ODT  
RTT  
ODTLon  
ODTLcwn4  
tAON  
tADC  
(min)  
tAOF  
(min)  
(min)  
tADC  
(min)  
RTT_NOM  
RTT_WR  
RTT_NOM  
tADC  
(max)  
tAOF  
(max)  
tAON  
tADC  
(max)  
(max)  
ODTLcnw  
DQS, DQS#  
DQ  
Din  
n
Din  
n+1  
Din  
n+2  
Din  
n+3  
WL  
TRANSITIONING DATA  
Don't Care  
NOTES:  
Example for BC4 (via MRS or OTF), AL = 0, CWL = 5. ODTH4 applies to first registering ODT high and to the registration of the Write command.  
In this example, ODTH4 would be satisfied if ODT went low at T8 (4 clocks after the Write command).  
Confidential  
77  
Rev. 3.0  
Aug. /2014  
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