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AS4C256K16E0-35JC 参数 Datasheet PDF下载

AS4C256K16E0-35JC图片预览
型号: AS4C256K16E0-35JC
PDF下载: 下载PDF文件 查看货源
内容描述: 5V 256Kx16 CMOS DRAM ( EDO ) [5V 256Kx16 CMOS DRAM (EDO)]
分类和应用: 存储内存集成电路光电二极管动态存储器
文件页数/大小: 24 页 / 632 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS4C256K16E0
®
Write cycle
Std
Symbol
t
ASC
t
CAH
t
AWR
t
WCS
t
WCH
t
WCR
t
WP
t
RWL
t
CWL
t
DS
t
DH
t
DHR
-30
Parameter
Column address setup time
-35
Max
Min
0
5
28
0
5
28
5
11
11
0
5
28
Max
Min
0
9
30
0
9
30
9
12
12
0
9
30
-50
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
12
12
11
11
Notes
Min
0
5
26
0
5
26
5
10
10
0
5
26
Column address hold time
Column address hold time to
RAS
Write command setup time
Write command hold time
Write command hold time to
RAS
Write command pulse width
Write command to
RAS
lead time
Write command to
CAS
lead time
Data-in setup time
Data-in hold time
Data-in hold time to
RAS
Shaded areas contain advance information.
Read-modify-write cycle
Std
Symbol
t
RWC
t
RWD
t
CWD
t
AWD
t
RSH(W)
t
CAS(W)
-30
Parameter
Read-write cycle time
RAS
to
WE
delay time
CAS
to
WE
delay time
-35
Max
Min
105
54
28
35
10
15
Max
Min
120
60
30
40
12
15
-50
Max
Unit
ns
ns
ns
ns
ns
ns
11
11
11
Notes
Min
100
50
26
32
10
15
Column address to
WE
delay time
CAS
to
RAS
hold time (write)
CAS
pulse width (write)
Shaded areas contain advance information.
4/11/01; v.1.1
Alliance Semiconductor
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