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AS3V2M16-70BI 参数 Datasheet PDF下载

AS3V2M16-70BI图片预览
型号: AS3V2M16-70BI
PDF下载: 下载PDF文件 查看货源
内容描述: [Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, FBGA-48]
分类和应用: 内存集成电路
文件页数/大小: 10 页 / 160 K
品牌: ALSC [ ALLIANCE SEMICONDUCTOR CORPORATION ]
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AS3V2M16  
&
ꢈꢈ  
Write cycle (over the operating range)  
–55  
–70  
–85  
Parameter  
Write cycle time  
Symbol  
tWC  
tCW  
tAW  
Min  
55  
45  
45  
0
Max  
Min  
70  
60  
60  
0
Max  
Min  
85  
60  
60  
0
Max  
Unit  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Notes  
12  
Chip select to write end  
Address setup to write end  
Address setup time  
tAS  
12  
Write pulse width  
tWP  
tAH  
tDW  
tDH  
40  
0
50  
0
50  
0
Address hold from end of write  
Data valid to write end  
Data hold time  
25  
0
30  
0
30  
0
4, 5  
4, 5  
4, 5  
Write enable to output in high Z  
Output active from write end  
UB/ LB low to end of write  
tWZ  
tOW  
tBW  
0
20  
0
20  
0
20  
5
5
5
45  
60  
60  
ꢈꢉꢁꢈꢈ  
Write waveform 1 (WE controlled, ZZ = High)  
t
t
WC  
CW  
Address  
CS  
t
AH  
t
BW  
LB, UB  
t
AW  
t
t
AS  
WP  
WE  
t
t
DH  
DW  
Data valid  
D
IN  
t
WZ  
t
OW  
D
Data undefined  
OUT  
High Z  
ꢈꢉꢁꢈꢈ  
Write waveform 2 (CS controlled, ZZ = High)  
t
WC  
Address  
t
t
AH  
AS  
t
CW  
CS  
t
AW  
t
BW  
LB, UB  
WE  
t
WP  
t
t
DH  
DW  
Data valid  
High Z  
D
IN  
t
t
CLZ  
WZ  
t
OW  
D
Data undefined  
OUT  
High Z  
10/ 17/ 02, V. 0.9.9  
Alliance Semiconductor  
P. 6 of 10